Fabrication of nanoscale heterostructure devices with a focused ion beam microscope

C Bell*, G Burnell, DJ Kang, RH Hadfield, MJ Kappers, MG Blamire, Chris Bell

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

59 Citations (Scopus)

Abstract

A focused ion beam (FIB) microscope has been used to fabricate junctions with dimensions in the range 100-5000 nm by three-dimensional etching. We have applied this process to a variety of structures, including current-perpendicular-to-plane giant-magnetoresistive multilayer devices, superconductor-metal-superconductor Josephson junctions, where the metal is Mo, Co, or a CuxNi1-x alloy, and GaN light-emitting diodes. In addition, Tl2Ba2CaCu2O8 intrinsic Josephson junctions were also fabricated and characterized. The flexibility of the FIB technique allowed junctions of many different materials and heterostructures to be fabricated with the same process.

Original languageEnglish
Article numberPII S0957-4484(03)59080-8
Pages (from-to)630-632
Number of pages3
JournalNanotechnology
Volume14
Issue number6
Publication statusPublished - Jun 2003

Keywords

  • JUNCTION
  • GAN

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