A focused ion beam (FIB) microscope has been used to fabricate junctions with dimensions in the range 100-5000 nm by three-dimensional etching. We have applied this process to a variety of structures, including current-perpendicular-to-plane giant-magnetoresistive multilayer devices, superconductor-metal-superconductor Josephson junctions, where the metal is Mo, Co, or a CuxNi1-x alloy, and GaN light-emitting diodes. In addition, Tl2Ba2CaCu2O8 intrinsic Josephson junctions were also fabricated and characterized. The flexibility of the FIB technique allowed junctions of many different materials and heterostructures to be fabricated with the same process.
|Article number||PII S0957-4484(03)59080-8|
|Number of pages||3|
|Publication status||Published - Jun 2003|