Two methods for Focused Ion Beam (FIB) etching of photonic crystal are presented. The first is a FIB-alone approach which is a very rapid, maskless process. This method has the disadvantage that it produces poor sidewall verticality, which leads to high losses in slab waveguide based systems. A second approach uses FIB to etch a metal mask layer, this is followed by reactive ion etching (RIE) of a SiO2 layer and a final inductively coupled plasma (ICP) etch of the InP layer. Results show much improved sidewall verticality.
|Translated title of the contribution||Fabrication of photonic crystal structures by focused ion beam etching|
|Title of host publication||6th International Conference on Transparent Optical Networks (ICTON 2004), Wroclaw, Poland|
|Publisher||Institute of Electrical and Electronics Engineers (IEEE)|
|Pages||135 - 138|
|Number of pages||9|
|Publication status||Published - Jul 2004|
|Event||6th International Conference on Transparent Optical Networks - Wroclaw, Poland|
Duration: 4 Jul 2004 → 8 Jul 2004
|Conference||6th International Conference on Transparent Optical Networks|
|Period||4/07/04 → 8/07/04|
Bibliographical noteRose publication type: Conference contribution
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- Focused Ion Beam (FIB) etching