Fabrication of photonic crystal structures by focused ion beam etching

M Hill, MJ Cryan, N Lim, R Varrazza, P Heard, S Yu, JM Rorison

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

1 Citation (Scopus)
280 Downloads (Pure)

Abstract

Two methods for Focused Ion Beam (FIB) etching of photonic crystal are presented. The first is a FIB-alone approach which is a very rapid, maskless process. This method has the disadvantage that it produces poor sidewall verticality, which leads to high losses in slab waveguide based systems. A second approach uses FIB to etch a metal mask layer, this is followed by reactive ion etching (RIE) of a SiO2 layer and a final inductively coupled plasma (ICP) etch of the InP layer. Results show much improved sidewall verticality.
Translated title of the contributionFabrication of photonic crystal structures by focused ion beam etching
Original languageEnglish
Title of host publication6th International Conference on Transparent Optical Networks (ICTON 2004), Wroclaw, Poland
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages135 - 138
Number of pages9
Volume2
ISBN (Print)0780383435
DOIs
Publication statusPublished - Jul 2004
Event6th International Conference on Transparent Optical Networks - Wroclaw, Poland
Duration: 4 Jul 20048 Jul 2004

Conference

Conference6th International Conference on Transparent Optical Networks
CountryPoland
CityWroclaw
Period4/07/048/07/04

Bibliographical note

Rose publication type: Conference contribution

Terms of use: Copyright © 2004 IEEE. Reprinted from 6th International Conference on Transparent Optical Networks, 2004.

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Keywords

  • Focused Ion Beam (FIB) etching

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