Abstract
Two methods for Focused Ion Beam (FIB) etching of photonic crystal are presented. The first is a FIB-alone approach which is a very rapid, maskless process. This method has the disadvantage that it produces poor sidewall verticality, which leads to high losses in slab waveguide based systems. A second approach uses FIB to etch a metal mask layer, this is followed by reactive ion etching (RIE) of a SiO2 layer and a final inductively coupled plasma (ICP) etch of the InP layer. Results show much improved sidewall verticality.
| Translated title of the contribution | Fabrication of photonic crystal structures by focused ion beam etching |
|---|---|
| Original language | English |
| Title of host publication | 6th International Conference on Transparent Optical Networks (ICTON 2004), Wroclaw, Poland |
| Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| Pages | 135 - 138 |
| Number of pages | 9 |
| Volume | 2 |
| ISBN (Print) | 0780383435 |
| DOIs | |
| Publication status | Published - Jul 2004 |
| Event | 6th International Conference on Transparent Optical Networks - Wroclaw, Poland Duration: 4 Jul 2004 → 8 Jul 2004 |
Conference
| Conference | 6th International Conference on Transparent Optical Networks |
|---|---|
| Country/Territory | Poland |
| City | Wroclaw |
| Period | 4/07/04 → 8/07/04 |
Bibliographical note
Rose publication type: Conference contributionTerms of use: Copyright © 2004 IEEE. Reprinted from 6th International Conference on Transparent Optical Networks, 2004.
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Research Groups and Themes
- Photonics and Quantum
Keywords
- Focused Ion Beam (FIB) etching
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