Fe-doped AlGaN/GaN HEMTs: Kink-effect screening using yellow luminescence?

Nicole Killat*, Michael J. Uren, David J. Wallis, Trevor Martin, Martin Kuball

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

1 Citation (Scopus)

Abstract

Yellow luminescence (YL) analysis was investigated as a possible route for the screening of as-grown wafers for kink effect in Fe-doped AlGaN/GaN HEMTs, i.e., prior to their final fabrication. This is because the kink effect in the output characteristics of GaN HEMTs has previously been suggested to originate from YL-related defect states. In contrast to earlier works, no direct correlation between YL intensity and kink size was observed in the devices studied. This suggests a more complex trapping process to be the underlying mechanism for the kink effect, rather than directly from YL defect states.

Original languageEnglish
Title of host publication2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013
Pages113-116
Number of pages4
Publication statusPublished - 15 Nov 2013
Event28th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013 - New Orleans, LA, United States
Duration: 13 May 201316 May 2013

Conference

Conference28th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013
CountryUnited States
CityNew Orleans, LA
Period13/05/1316/05/13

Keywords

  • AlGaN/gan hemt
  • Fe doping
  • Kink effect
  • Yellow luminescence

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    Killat, N., Uren, M. J., Wallis, D. J., Martin, T., & Kuball, M. (2013). Fe-doped AlGaN/GaN HEMTs: Kink-effect screening using yellow luminescence? In 2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013 (pp. 113-116)