Fe-doped AlGaN/GaN HEMTs: Kink-effect screening using yellow luminescence?

Nicole Killat; Michael J. Uren; David J. Wallis; Trevor Martin; Martin Kuball

Fe-doped AlGaN/GaN HEMTs: Kink-effect screening using yellow luminescence?

Nicole Killat^*, Michael J. Uren, David J. Wallis, Trevor Martin, Martin Kuball

^*Corresponding author for this work

School of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

1 Citation (Scopus)

Abstract

Yellow luminescence (YL) analysis was investigated as a possible route for the screening of as-grown wafers for kink effect in Fe-doped AlGaN/GaN HEMTs, i.e., prior to their final fabrication. This is because the kink effect in the output characteristics of GaN HEMTs has previously been suggested to originate from YL-related defect states. In contrast to earlier works, no direct correlation between YL intensity and kink size was observed in the devices studied. This suggests a more complex trapping process to be the underlying mechanism for the kink effect, rather than directly from YL defect states.

Original language	English
Title of host publication	2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013
Pages	113-116
Number of pages	4
Publication status	Published - 15 Nov 2013
Event	28th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013 - New Orleans, LA, United States Duration: 13 May 2013 → 16 May 2013

Conference

Conference	28th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013
Country/Territory	United States
City	New Orleans, LA
Period	13/05/13 → 16/05/13

Keywords

AlGaN/gan hemt
Fe doping
Kink effect
Yellow luminescence

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@inproceedings{92ca45bac2c64670906e75d4f982cd42,

title = "Fe-doped AlGaN/GaN HEMTs: Kink-effect screening using yellow luminescence?",

abstract = "Yellow luminescence (YL) analysis was investigated as a possible route for the screening of as-grown wafers for kink effect in Fe-doped AlGaN/GaN HEMTs, i.e., prior to their final fabrication. This is because the kink effect in the output characteristics of GaN HEMTs has previously been suggested to originate from YL-related defect states. In contrast to earlier works, no direct correlation between YL intensity and kink size was observed in the devices studied. This suggests a more complex trapping process to be the underlying mechanism for the kink effect, rather than directly from YL defect states.",

keywords = "AlGaN/gan hemt, Fe doping, Kink effect, Yellow luminescence",

author = "Nicole Killat and Uren, {Michael J.} and Wallis, {David J.} and Trevor Martin and Martin Kuball",

year = "2013",

month = nov,

day = "15",

language = "English",

isbn = "1893580210",

pages = "113--116",

booktitle = "2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013",

note = "28th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013 ; Conference date: 13-05-2013 Through 16-05-2013",

}

Killat, N, Uren, MJ, Wallis, DJ, Martin, T & Kuball, M 2013, Fe-doped AlGaN/GaN HEMTs: Kink-effect screening using yellow luminescence? in 2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013. pp. 113-116, 28th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013, New Orleans, LA, United States, 13/05/13.

TY - GEN

T1 - Fe-doped AlGaN/GaN HEMTs

T2 - 28th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013

AU - Killat, Nicole

AU - Uren, Michael J.

AU - Wallis, David J.

AU - Martin, Trevor

AU - Kuball, Martin

PY - 2013/11/15

Y1 - 2013/11/15

N2 - Yellow luminescence (YL) analysis was investigated as a possible route for the screening of as-grown wafers for kink effect in Fe-doped AlGaN/GaN HEMTs, i.e., prior to their final fabrication. This is because the kink effect in the output characteristics of GaN HEMTs has previously been suggested to originate from YL-related defect states. In contrast to earlier works, no direct correlation between YL intensity and kink size was observed in the devices studied. This suggests a more complex trapping process to be the underlying mechanism for the kink effect, rather than directly from YL defect states.

AB - Yellow luminescence (YL) analysis was investigated as a possible route for the screening of as-grown wafers for kink effect in Fe-doped AlGaN/GaN HEMTs, i.e., prior to their final fabrication. This is because the kink effect in the output characteristics of GaN HEMTs has previously been suggested to originate from YL-related defect states. In contrast to earlier works, no direct correlation between YL intensity and kink size was observed in the devices studied. This suggests a more complex trapping process to be the underlying mechanism for the kink effect, rather than directly from YL defect states.

KW - AlGaN/gan hemt

KW - Fe doping

KW - Kink effect

KW - Yellow luminescence

UR - http://www.scopus.com/inward/record.url?scp=84887354568&partnerID=8YFLogxK

M3 - Conference Contribution (Conference Proceeding)

AN - SCOPUS:84887354568

SN - 1893580210

SN - 9781893580213

SP - 113

EP - 116

BT - 2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013

Y2 - 13 May 2013 through 16 May 2013

ER -

Fe-doped AlGaN/GaN HEMTs: Kink-effect screening using yellow luminescence?

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