FEM-based analysis of avalanche ruggedness of high voltage SiC Merged-PiN-Schottky and Junction-Barrier-Schottky diodes

Chengjun Shen; Renze Yu; Saeed Jahdi; Phil H Mellor; Sai Priya  Munagala; Andrew N Hopkins; Nick Simpson; Jose Ortiz-Gonzalez; Olayiwola Alatise

doi:10.1016/j.microrel.2022.114686

FEM-based analysis of avalanche ruggedness of high voltage SiC Merged-PiN-Schottky and Junction-Barrier-Schottky diodes

Chengjun Shen^*, Renze Yu, Saeed Jahdi, Phil H Mellor, Sai Priya Munagala, Andrew N Hopkins, Nick Simpson, Jose Ortiz-Gonzalez, Olayiwola Alatise

^*Corresponding author for this work

Research output: Contribution to journal › Article (Academic Journal) › peer-review

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Abstract

Through comprehensive experimental measurements and TCAD simulation, it is shown that the avalanche ruggedness of SiC MPS & JBS diodes outperforms that of closely rated Silicon PiN diodes taking advantage of the wide-bandgap properties of SiC which leads to a high ionization and activation energy given the strong covalent bonds. Although the MPS diode structure favours a high reverse blocking voltage with small leakage current and a high current conduction, the localise current crowding caused by the multiple P+ implanted region leads to the avalanche breakdown at lower load currents than the SiC JBS diode. The results of Silvaco TCAD Finite Element modellings have a good agreement with the experimental measurements, indicating that SiC JBS diode can withstand the high junction temperature induced by avalanche in line with the calculated avalanche energy.

Original language	English
Article number	114686
Number of pages	11
Journal	Microelectronics Reliability
Volume	138
Early online date	25 Sept 2022
DOIs	https://doi.org/10.1016/j.microrel.2022.114686
Publication status	Published - 1 Nov 2022

Bibliographical note

Funding Information:
This work is supported by the EPSRC Supergen Energy Networks Grant EP/S00078X/2. CT data were obtained at the XTM Facility, Palaeobiology Research Group, University of Bristol.

Funding Information:
This work is supported by the EPSRC Supergen Energy Networks Grant EP/S00078X/2 . CT data were obtained at the XTM Facility, Palaeobiology Research Group, University of Bristol.

Publisher Copyright:
© 2022 The Authors

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@article{3fc3b977331840e3beeca8ee670f25ed,

title = "FEM-based analysis of avalanche ruggedness of high voltage SiC Merged-PiN-Schottky and Junction-Barrier-Schottky diodes",

abstract = "Through comprehensive experimental measurements and TCAD simulation, it is shown that the avalanche ruggedness of SiC MPS \& JBS diodes outperforms that of closely rated Silicon PiN diodes taking advantage of the wide-bandgap properties of SiC which leads to a high ionization and activation energy given the strong covalent bonds. Although the MPS diode structure favours a high reverse blocking voltage with small leakage current and a high current conduction, the localise current crowding caused by the multiple P+ implanted region leads to the avalanche breakdown at lower load currents than the SiC JBS diode. The results of Silvaco TCAD Finite Element modellings have a good agreement with the experimental measurements, indicating that SiC JBS diode can withstand the high junction temperature induced by avalanche in line with the calculated avalanche energy.",

author = "Chengjun Shen and Renze Yu and Saeed Jahdi and Mellor, \{Phil H\} and Munagala, \{Sai Priya\} and Hopkins, \{Andrew N\} and Nick Simpson and Jose Ortiz-Gonzalez and Olayiwola Alatise",

note = "Funding Information: This work is supported by the EPSRC Supergen Energy Networks Grant EP/S00078X/2. CT data were obtained at the XTM Facility, Palaeobiology Research Group, University of Bristol. Funding Information: This work is supported by the EPSRC Supergen Energy Networks Grant EP/S00078X/2 . CT data were obtained at the XTM Facility, Palaeobiology Research Group, University of Bristol. Publisher Copyright: {\textcopyright} 2022 The Authors",

year = "2022",

month = nov,

day = "1",

doi = "10.1016/j.microrel.2022.114686",

language = "English",

volume = "138",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - FEM-based analysis of avalanche ruggedness of high voltage SiC Merged-PiN-Schottky and Junction-Barrier-Schottky diodes

AU - Shen, Chengjun

AU - Yu, Renze

AU - Jahdi, Saeed

AU - Mellor, Phil H

AU - Munagala, Sai Priya

AU - Hopkins, Andrew N

AU - Simpson, Nick

AU - Ortiz-Gonzalez, Jose

AU - Alatise, Olayiwola

N1 - Funding Information: This work is supported by the EPSRC Supergen Energy Networks Grant EP/S00078X/2. CT data were obtained at the XTM Facility, Palaeobiology Research Group, University of Bristol. Funding Information: This work is supported by the EPSRC Supergen Energy Networks Grant EP/S00078X/2 . CT data were obtained at the XTM Facility, Palaeobiology Research Group, University of Bristol. Publisher Copyright: © 2022 The Authors

PY - 2022/11/1

Y1 - 2022/11/1

N2 - Through comprehensive experimental measurements and TCAD simulation, it is shown that the avalanche ruggedness of SiC MPS & JBS diodes outperforms that of closely rated Silicon PiN diodes taking advantage of the wide-bandgap properties of SiC which leads to a high ionization and activation energy given the strong covalent bonds. Although the MPS diode structure favours a high reverse blocking voltage with small leakage current and a high current conduction, the localise current crowding caused by the multiple P+ implanted region leads to the avalanche breakdown at lower load currents than the SiC JBS diode. The results of Silvaco TCAD Finite Element modellings have a good agreement with the experimental measurements, indicating that SiC JBS diode can withstand the high junction temperature induced by avalanche in line with the calculated avalanche energy.

AB - Through comprehensive experimental measurements and TCAD simulation, it is shown that the avalanche ruggedness of SiC MPS & JBS diodes outperforms that of closely rated Silicon PiN diodes taking advantage of the wide-bandgap properties of SiC which leads to a high ionization and activation energy given the strong covalent bonds. Although the MPS diode structure favours a high reverse blocking voltage with small leakage current and a high current conduction, the localise current crowding caused by the multiple P+ implanted region leads to the avalanche breakdown at lower load currents than the SiC JBS diode. The results of Silvaco TCAD Finite Element modellings have a good agreement with the experimental measurements, indicating that SiC JBS diode can withstand the high junction temperature induced by avalanche in line with the calculated avalanche energy.

UR - http://dx.doi.org/10.1016/j.microrel.2022.114686

U2 - 10.1016/j.microrel.2022.114686

DO - 10.1016/j.microrel.2022.114686

M3 - Article (Academic Journal)

SN - 0026-2714

VL - 138

JO - Microelectronics Reliability

JF - Microelectronics Reliability

M1 - 114686

ER -

FEM-based analysis of avalanche ruggedness of high voltage SiC Merged-PiN-Schottky and Junction-Barrier-Schottky diodes

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Analysis of performance of SiC bipolar semiconductor devices for grid-level converters

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FEM-based analysis of avalanche ruggedness of high voltage SiC Merged-PiN-Schottky and Junction-Barrier-Schottky diodes

Abstract

Bibliographical note

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Analysis of performance of SiC bipolar semiconductor devices for grid-level converters

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