Field effect luminescence from Si nanocrystals obtained by plasma-enhanced chemical vapor deposition

M. Perálvarez*, C. García, M. López, B. Garrido, J. Barreto, C. Domínguez, J. A. Rodríguez

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

75 Citations (Scopus)

Abstract

Field effect induced luminescence has been achieved by alternate tunnel injection of electrons and holes into Si nanocrystals. The emitting device is a metal-oxide-semiconductor structure with a semitransparent polycrystalline Si contact ∼250 nm thick and a silicon-rich silicon oxide layer of about 40 nm deposited on a p-type Si substrate by plasma-enhanced chemical vapor deposition. The electroluminescence is optimized for a Si excess of 17% and annealing at 1250 °C for 1 h in nitrogen-rich atmosphere. The pulsed emission presents typical decay times of ∼5 μs and external quantum efficiencies of ∼0.03%.

Original languageEnglish
Article number051112
JournalApplied Physics Letters
Volume89
Issue number5
DOIs
Publication statusPublished - 2006

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