Figure of merit for selecting super-junction MOSFETs in high efficiency voltage source converters

Andrew Hopkins; Neville McNeill; Philip H Anthony; Phil Mellor

doi:10.1109/ECCE.2015.7310195

Figure of merit for selecting super-junction MOSFETs in high efficiency voltage source converters

Andrew Hopkins, Neville McNeill, Philip H Anthony, Phil Mellor

Department of Electrical & Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

10 Citations (Scopus)

518 Downloads (Pure)

Abstract

Silicon super-junction MOSFETs have very low on-state resistances and fast switching characteristics. However, their use in voltage-source converters is hindered by the poor reverse recovery performance of their body drain diode and an adverse output capacitance characteristic. These both act to increase the overall switching loss. The on-state resistance and output capacitance characteristics of super junction devices are both related to the area of the silicon die. As this increases, the on-state resistance decreases but the output capacitance increases. A figure of merit is evaluated with both predicted and experimental results using a 400-V, DC-DC synchronous buck-converter operating over a range of output currents and switching frequencies.

Original language	English
Title of host publication	2015 IEEE Energy Conversion Congress and Exposition (ECCE 2015)
Subtitle of host publication	Proceedings of a meeting held 20-24 September 2015, Montreal, Quebec, Canada
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	3788-3793
Number of pages	6
ISBN (Electronic)	9781467371506
ISBN (Print)	9781467371520
DOIs	https://doi.org/10.1109/ECCE.2015.7310195
Publication status	Published - Jan 2016
Event	2015 IEEE Energy Conversion Congress and Exposition - Montreal Convention Center, Montréal , Canada Duration: 20 Sep 2015 → 24 Sep 2015

Publication series

Name	IEEE Energy Conversion Congress and Exposition (ECCE)
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
ISSN (Print)	2329-3721

Conference

Conference	2015 IEEE Energy Conversion Congress and Exposition
Country/Territory	Canada
City	Montréal
Period	20/09/15 → 24/09/15

Access to Document

10.1109/ECCE.2015.7310195

Andrew Hopkins - Figure of Merit for Selecting Super-Junction MOSFETs in High Efficiency Voltage Source ConvertersAccepted author manuscript, 278 KB

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Persistent link

Low Carbon Vehicle - Warwick
Mellor, P. H.
1/10/11 → 1/04/16
Project: Research

Cite this

Hopkins, A., McNeill, N., Anthony, P. H., & Mellor, P. (2016). Figure of merit for selecting super-junction MOSFETs in high efficiency voltage source converters. In 2015 IEEE Energy Conversion Congress and Exposition (ECCE 2015): Proceedings of a meeting held 20-24 September 2015, Montreal, Quebec, Canada (pp. 3788-3793 ). (IEEE Energy Conversion Congress and Exposition (ECCE)). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/ECCE.2015.7310195

Hopkins, Andrew ; McNeill, Neville ; Anthony, Philip H et al. / Figure of merit for selecting super-junction MOSFETs in high efficiency voltage source converters. 2015 IEEE Energy Conversion Congress and Exposition (ECCE 2015): Proceedings of a meeting held 20-24 September 2015, Montreal, Quebec, Canada. Institute of Electrical and Electronics Engineers (IEEE), 2016. pp. 3788-3793 (IEEE Energy Conversion Congress and Exposition (ECCE)).

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title = "Figure of merit for selecting super-junction MOSFETs in high efficiency voltage source converters",

abstract = "Silicon super-junction MOSFETs have very low on-state resistances and fast switching characteristics. However, their use in voltage-source converters is hindered by the poor reverse recovery performance of their body drain diode and an adverse output capacitance characteristic. These both act to increase the overall switching loss. The on-state resistance and output capacitance characteristics of super junction devices are both related to the area of the silicon die. As this increases, the on-state resistance decreases but the output capacitance increases. A figure of merit is evaluated with both predicted and experimental results using a 400-V, DC-DC synchronous buck-converter operating over a range of output currents and switching frequencies.",

author = "Andrew Hopkins and Neville McNeill and Anthony, {Philip H} and Phil Mellor",

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doi = "10.1109/ECCE.2015.7310195",

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publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

pages = "3788--3793 ",

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address = "United States",

note = "2015 IEEE Energy Conversion Congress and Exposition ; Conference date: 20-09-2015 Through 24-09-2015",

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Hopkins, A, McNeill, N, Anthony, PH & Mellor, P 2016, Figure of merit for selecting super-junction MOSFETs in high efficiency voltage source converters. in 2015 IEEE Energy Conversion Congress and Exposition (ECCE 2015): Proceedings of a meeting held 20-24 September 2015, Montreal, Quebec, Canada. IEEE Energy Conversion Congress and Exposition (ECCE), Institute of Electrical and Electronics Engineers (IEEE), pp. 3788-3793 , 2015 IEEE Energy Conversion Congress and Exposition, Montréal , Canada, 20/09/15. https://doi.org/10.1109/ECCE.2015.7310195

Figure of merit for selecting super-junction MOSFETs in high efficiency voltage source converters. / Hopkins, Andrew; McNeill, Neville; Anthony, Philip H et al.

2015 IEEE Energy Conversion Congress and Exposition (ECCE 2015): Proceedings of a meeting held 20-24 September 2015, Montreal, Quebec, Canada. Institute of Electrical and Electronics Engineers (IEEE), 2016. p. 3788-3793 (IEEE Energy Conversion Congress and Exposition (ECCE)).

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - Figure of merit for selecting super-junction MOSFETs in high efficiency voltage source converters

AU - Hopkins, Andrew

AU - McNeill, Neville

AU - Anthony, Philip H

AU - Mellor, Phil

PY - 2016/1

Y1 - 2016/1

N2 - Silicon super-junction MOSFETs have very low on-state resistances and fast switching characteristics. However, their use in voltage-source converters is hindered by the poor reverse recovery performance of their body drain diode and an adverse output capacitance characteristic. These both act to increase the overall switching loss. The on-state resistance and output capacitance characteristics of super junction devices are both related to the area of the silicon die. As this increases, the on-state resistance decreases but the output capacitance increases. A figure of merit is evaluated with both predicted and experimental results using a 400-V, DC-DC synchronous buck-converter operating over a range of output currents and switching frequencies.

AB - Silicon super-junction MOSFETs have very low on-state resistances and fast switching characteristics. However, their use in voltage-source converters is hindered by the poor reverse recovery performance of their body drain diode and an adverse output capacitance characteristic. These both act to increase the overall switching loss. The on-state resistance and output capacitance characteristics of super junction devices are both related to the area of the silicon die. As this increases, the on-state resistance decreases but the output capacitance increases. A figure of merit is evaluated with both predicted and experimental results using a 400-V, DC-DC synchronous buck-converter operating over a range of output currents and switching frequencies.

U2 - 10.1109/ECCE.2015.7310195

DO - 10.1109/ECCE.2015.7310195

M3 - Conference Contribution (Conference Proceeding)

SN - 9781467371520

T3 - IEEE Energy Conversion Congress and Exposition (ECCE)

SP - 3788

EP - 3793

BT - 2015 IEEE Energy Conversion Congress and Exposition (ECCE 2015)

PB - Institute of Electrical and Electronics Engineers (IEEE)

T2 - 2015 IEEE Energy Conversion Congress and Exposition

Y2 - 20 September 2015 through 24 September 2015

ER -

Hopkins A, McNeill N, Anthony PH, Mellor P. Figure of merit for selecting super-junction MOSFETs in high efficiency voltage source converters. In 2015 IEEE Energy Conversion Congress and Exposition (ECCE 2015): Proceedings of a meeting held 20-24 September 2015, Montreal, Quebec, Canada. Institute of Electrical and Electronics Engineers (IEEE). 2016. p. 3788-3793 . (IEEE Energy Conversion Congress and Exposition (ECCE)). Epub 2015 Oct 29. doi: 10.1109/ECCE.2015.7310195

Figure of merit for selecting super-junction MOSFETs in high efficiency voltage source converters

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