Finite element analysis of epitaxial lateral overgroan GaN:  Voids at the coalescence boundary

M Benyoucef; MHH Kuball; GFJ Hill; MR Wisnom; B Beaumont; P Gibart

doi:10.1063/1.1426276

Finite element analysis of epitaxial lateral overgroan GaN: Voids at the coalescence boundary

M Benyoucef, MHH Kuball, GFJ Hill, MR Wisnom, B Beaumont, P Gibart

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Abstract

We report on the finite element analysis of stress distribution at the coalescence boundary in epitaxial lateral overgrown (ELO) GaN related to voids. Different void geometries were considered in our model to investigate the influence of their size/shape on the stress distribution. Large compressive stress is localized in the vicinity of the voids, also an increased tensile stress is present at the corners of the SiN mask. Confocal micro-Raman mapping experiments confirm the presence of increased stress at the coalescence boundary of ELO GaN.

Translated title of the contribution	Finite element analysis of epitaxial lateral overgroan GaN: Voids at the coalescence boundary
Original language	English
Pages (from-to)	4127 - 4129
Number of pages	3
Journal	Applied Physics Letters
Volume	79(25)
DOIs	https://doi.org/10.1063/1.1426276
Publication status	Published - Dec 2001

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Publisher: American Institute of Physics

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title = "Finite element analysis of epitaxial lateral overgroan GaN: Voids at the coalescence boundary",

abstract = "We report on the finite element analysis of stress distribution at the coalescence boundary in epitaxial lateral overgrown (ELO) GaN related to voids. Different void geometries were considered in our model to investigate the influence of their size/shape on the stress distribution. Large compressive stress is localized in the vicinity of the voids, also an increased tensile stress is present at the corners of the SiN mask. Confocal micro-Raman mapping experiments confirm the presence of increased stress at the coalescence boundary of ELO GaN.",

author = "M Benyoucef and MHH Kuball and GFJ Hill and MR Wisnom and B Beaumont and P Gibart",

note = "Publisher: American Institute of Physics",

year = "2001",

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pages = "4127 -- 4129",

journal = "Applied Physics Letters",

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T1 - Finite element analysis of epitaxial lateral overgroan GaN: Voids at the coalescence boundary

AU - Benyoucef, M

AU - Kuball, MHH

AU - Hill, GFJ

AU - Wisnom, MR

AU - Beaumont, B

AU - Gibart, P

N1 - Publisher: American Institute of Physics

PY - 2001/12

Y1 - 2001/12

N2 - We report on the finite element analysis of stress distribution at the coalescence boundary in epitaxial lateral overgrown (ELO) GaN related to voids. Different void geometries were considered in our model to investigate the influence of their size/shape on the stress distribution. Large compressive stress is localized in the vicinity of the voids, also an increased tensile stress is present at the corners of the SiN mask. Confocal micro-Raman mapping experiments confirm the presence of increased stress at the coalescence boundary of ELO GaN.

AB - We report on the finite element analysis of stress distribution at the coalescence boundary in epitaxial lateral overgrown (ELO) GaN related to voids. Different void geometries were considered in our model to investigate the influence of their size/shape on the stress distribution. Large compressive stress is localized in the vicinity of the voids, also an increased tensile stress is present at the corners of the SiN mask. Confocal micro-Raman mapping experiments confirm the presence of increased stress at the coalescence boundary of ELO GaN.

U2 - 10.1063/1.1426276

DO - 10.1063/1.1426276

M3 - Article (Academic Journal)

SN - 1077-3118

VL - 79(25)

SP - 4127

EP - 4129

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -