Finite element analysis of epitaxial lateral overgroan GaN: Voids at the coalescence boundary

M Benyoucef, MHH Kuball, GFJ Hill, MR Wisnom, B Beaumont, P Gibart

Research output: Contribution to journalArticle (Academic Journal)

15 Citations (Scopus)

Abstract

We report on the finite element analysis of stress distribution at the coalescence boundary in epitaxial lateral overgrown (ELO) GaN related to voids. Different void geometries were considered in our model to investigate the influence of their size/shape on the stress distribution. Large compressive stress is localized in the vicinity of the voids, also an increased tensile stress is present at the corners of the SiN mask. Confocal micro-Raman mapping experiments confirm the presence of increased stress at the coalescence boundary of ELO GaN.
Translated title of the contributionFinite element analysis of epitaxial lateral overgroan GaN: Voids at the coalescence boundary
Original languageEnglish
Pages (from-to)4127 - 4129
Number of pages3
JournalApplied Physics Letters
Volume79(25)
DOIs
Publication statusPublished - Dec 2001

Bibliographical note

Publisher: American Institute of Physics

Structured keywords

  • CDTR

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