Finite element analysis of epitaxial lateral overgrown GaN: Voids at the coalescence boundary

M Benyoucef; M Kuball; G Hill; M Wisnom; B Beaumont; P Gibart

Finite element analysis of epitaxial lateral overgrown GaN: Voids at the coalescence boundary

M Benyoucef^*, M Kuball, G Hill, M Wisnom, B Beaumont, P Gibart

^*Corresponding author for this work

Research output: Contribution to journal › Article (Academic Journal) › peer-review

Abstract

We report on the finite element analysis of stress distribution at the coalescence boundary in epitaxial lateral overgrown (ELO) GaN related to voids. Different void geometries were considered in our model to investigate the influence of their size/shape on the stress distribution. Large compressive stress is localized in the vicinity of the voids, also an increased tensile stress is present at the corners of the SiN mask. Confocal micro-Raman mapping experiments confirm the presence of increased stress at the coalescence boundary of ELO GaN. (C) 2001 American Institute of Physics.

Original language	English
Pages (from-to)	4127-4129
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	25
Publication status	Published - 17 Dec 2001

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Keywords

RELAXATION
DENSITY
GROWTH
FILMS

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title = "Finite element analysis of epitaxial lateral overgrown GaN: Voids at the coalescence boundary",

abstract = "We report on the finite element analysis of stress distribution at the coalescence boundary in epitaxial lateral overgrown (ELO) GaN related to voids. Different void geometries were considered in our model to investigate the influence of their size/shape on the stress distribution. Large compressive stress is localized in the vicinity of the voids, also an increased tensile stress is present at the corners of the SiN mask. Confocal micro-Raman mapping experiments confirm the presence of increased stress at the coalescence boundary of ELO GaN. (C) 2001 American Institute of Physics.",

keywords = "RELAXATION, DENSITY, GROWTH, FILMS",

author = "M Benyoucef and M Kuball and G Hill and M Wisnom and B Beaumont and P Gibart",

year = "2001",

month = dec,

day = "17",

language = "English",

volume = "79",

pages = "4127--4129",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics (AIP)",

number = "25",

}

TY - JOUR

T1 - Finite element analysis of epitaxial lateral overgrown GaN

T2 - Voids at the coalescence boundary

AU - Benyoucef, M

AU - Kuball, M

AU - Hill, G

AU - Wisnom, M

AU - Beaumont, B

AU - Gibart, P

PY - 2001/12/17

Y1 - 2001/12/17

N2 - We report on the finite element analysis of stress distribution at the coalescence boundary in epitaxial lateral overgrown (ELO) GaN related to voids. Different void geometries were considered in our model to investigate the influence of their size/shape on the stress distribution. Large compressive stress is localized in the vicinity of the voids, also an increased tensile stress is present at the corners of the SiN mask. Confocal micro-Raman mapping experiments confirm the presence of increased stress at the coalescence boundary of ELO GaN. (C) 2001 American Institute of Physics.

AB - We report on the finite element analysis of stress distribution at the coalescence boundary in epitaxial lateral overgrown (ELO) GaN related to voids. Different void geometries were considered in our model to investigate the influence of their size/shape on the stress distribution. Large compressive stress is localized in the vicinity of the voids, also an increased tensile stress is present at the corners of the SiN mask. Confocal micro-Raman mapping experiments confirm the presence of increased stress at the coalescence boundary of ELO GaN. (C) 2001 American Institute of Physics.

KW - RELAXATION

KW - DENSITY

KW - GROWTH

KW - FILMS

M3 - Article (Academic Journal)

SN - 0003-6951

VL - 79

SP - 4127

EP - 4129

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

Finite element analysis of epitaxial lateral overgrown GaN: Voids at the coalescence boundary

Abstract

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