Finite element analysis of epitaxial lateral overgrown GaN: Voids at the coalescence boundary

M Benyoucef*, M Kuball, G Hill, M Wisnom, B Beaumont, P Gibart

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

Abstract

We report on the finite element analysis of stress distribution at the coalescence boundary in epitaxial lateral overgrown (ELO) GaN related to voids. Different void geometries were considered in our model to investigate the influence of their size/shape on the stress distribution. Large compressive stress is localized in the vicinity of the voids, also an increased tensile stress is present at the corners of the SiN mask. Confocal micro-Raman mapping experiments confirm the presence of increased stress at the coalescence boundary of ELO GaN. (C) 2001 American Institute of Physics.

Original languageEnglish
Pages (from-to)4127-4129
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number25
Publication statusPublished - 17 Dec 2001

Structured keywords

  • CDTR

Keywords

  • RELAXATION
  • DENSITY
  • GROWTH
  • FILMS

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