First cryogenic electro-optic switch on silicon with high bandwidth and low power tunability

Felix Eltes, Jorge Barreto, Daniele Caimi, Siegfried F. Karg, Antonio Andreas Gentile, Andy Hart, Pascal Stark, Norbert Meier, Mark Thompson, Jean Fompeyrine, Stefan Abel

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

2 Citations (Scopus)
182 Downloads (Pure)

Abstract

We demonstrate the first electro-optic switch operating at cryogenic temperatures of 4 K with a high electrooptic bandwidth of > 18 GHz. Our novel technology exploits the Pockels effect in barium titanate thin films co-integrated with silicon photonics and offers low losses, pure phase modulation, and sub-pW electro-optic tuning.
Original languageEnglish
Title of host publication2018 IEEE International Electron Devices Meeting (IEDM)
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages23.1. 1-23.1. 4
Number of pages4
Volume2018-December
ISBN (Electronic)9781728119878
DOIs
Publication statusPublished - 16 Jan 2019
Event64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, United States
Duration: 1 Dec 20185 Dec 2018

Publication series

NameIEEE International Electron Devices Meeting (IEDM)
PublisherIEEE
ISSN (Print)0163-1918

Conference

Conference64th Annual IEEE International Electron Devices Meeting, IEDM 2018
CountryUnited States
CitySan Francisco
Period1/12/185/12/18

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    Eltes, F., Barreto, J., Caimi, D., Karg, S. F., Gentile, A. A., Hart, A., Stark, P., Meier, N., Thompson, M., Fompeyrine, J., & Abel, S. (2019). First cryogenic electro-optic switch on silicon with high bandwidth and low power tunability. In 2018 IEEE International Electron Devices Meeting (IEDM) (Vol. 2018-December, pp. 23.1. 1-23.1. 4). [8614511] (IEEE International Electron Devices Meeting (IEDM)). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/IEDM.2018.8614511