First cryogenic electro-optic switch on silicon with high bandwidth and low power tunability

Felix Eltes; Jorge Barreto; Daniele Caimi; Siegfried F. Karg; Antonio Andreas Gentile; Andy Hart; Pascal Stark; Norbert Meier; Mark Thompson; Jean Fompeyrine; Stefan Abel

doi:10.1109/IEDM.2018.8614511

First cryogenic electro-optic switch on silicon with high bandwidth and low power tunability

Felix Eltes, Jorge Barreto, Daniele Caimi, Siegfried F. Karg, Antonio Andreas Gentile, Andy Hart, Pascal Stark, Norbert Meier, Mark Thompson, Jean Fompeyrine, Stefan Abel

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

7 Citations (Scopus)

660 Downloads (Pure)

Abstract

We demonstrate the first electro-optic switch operating at cryogenic temperatures of 4 K with a high electrooptic bandwidth of > 18 GHz. Our novel technology exploits the Pockels effect in barium titanate thin films co-integrated with silicon photonics and offers low losses, pure phase modulation, and sub-pW electro-optic tuning.

Original language	English
Title of host publication	2018 IEEE International Electron Devices Meeting (IEDM)
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	23.1. 1-23.1. 4
Number of pages	4
Volume	2018-December
ISBN (Electronic)	9781728119878
DOIs	https://doi.org/10.1109/IEDM.2018.8614511
Publication status	Published - 16 Jan 2019
Event	64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, United States Duration: 1 Dec 2018 → 5 Dec 2018

Publication series

Name	IEEE International Electron Devices Meeting (IEDM)
Publisher	IEEE
ISSN (Print)	0163-1918

Conference

Conference	64th Annual IEEE International Electron Devices Meeting, IEDM 2018
Country/Territory	United States
City	San Francisco
Period	1/12/18 → 5/12/18

Research Groups and Themes

Bristol Quantum Information Institute
QETLabs
Photonics and Quantum

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10.1109/IEDM.2018.8614511

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This is the accepted author manuscript (AAM). The final published version (version of record) is available online via IEEE at https://doi.org/10.1109/IEDM.2018.8614511 . Please refer to any applicable terms of use of the publisher.
Accepted author manuscript, 1.06 MBLicence: Other

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Eltes, F., Barreto, J., Caimi, D., Karg, S. F., Gentile, A. A., Hart, A., Stark, P., Meier, N., Thompson, M., Fompeyrine, J., & Abel, S. (2019). First cryogenic electro-optic switch on silicon with high bandwidth and low power tunability. In 2018 IEEE International Electron Devices Meeting (IEDM) (Vol. 2018-December, pp. 23.1. 1-23.1. 4). Article 8614511 (IEEE International Electron Devices Meeting (IEDM)). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/IEDM.2018.8614511

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title = "First cryogenic electro-optic switch on silicon with high bandwidth and low power tunability",

abstract = "We demonstrate the first electro-optic switch operating at cryogenic temperatures of 4 K with a high electrooptic bandwidth of > 18 GHz. Our novel technology exploits the Pockels effect in barium titanate thin films co-integrated with silicon photonics and offers low losses, pure phase modulation, and sub-pW electro-optic tuning.",

author = "Felix Eltes and Jorge Barreto and Daniele Caimi and Karg, \{Siegfried F.\} and Gentile, \{Antonio Andreas\} and Andy Hart and Pascal Stark and Norbert Meier and Mark Thompson and Jean Fompeyrine and Stefan Abel",

year = "2019",

month = jan,

day = "16",

doi = "10.1109/IEDM.2018.8614511",

language = "English",

volume = "2018-December",

series = "IEEE International Electron Devices Meeting (IEDM)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

pages = "23.1. 1--23.1. 4",

booktitle = "2018 IEEE International Electron Devices Meeting (IEDM)",

address = "United States",

note = "64th Annual IEEE International Electron Devices Meeting, IEDM 2018 ; Conference date: 01-12-2018 Through 05-12-2018",

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Eltes, F, Barreto, J, Caimi, D, Karg, SF, Gentile, AA, Hart, A, Stark, P, Meier, N, Thompson, M, Fompeyrine, J & Abel, S 2019, First cryogenic electro-optic switch on silicon with high bandwidth and low power tunability. in 2018 IEEE International Electron Devices Meeting (IEDM). vol. 2018-December, 8614511, IEEE International Electron Devices Meeting (IEDM), Institute of Electrical and Electronics Engineers (IEEE), pp. 23.1. 1-23.1. 4, 64th Annual IEEE International Electron Devices Meeting, IEDM 2018, San Francisco, United States, 1/12/18. https://doi.org/10.1109/IEDM.2018.8614511

First cryogenic electro-optic switch on silicon with high bandwidth and low power tunability. / Eltes, Felix; Barreto, Jorge; Caimi, Daniele et al.
2018 IEEE International Electron Devices Meeting (IEDM). Vol. 2018-December Institute of Electrical and Electronics Engineers (IEEE), 2019. p. 23.1. 1-23.1. 4 8614511 (IEEE International Electron Devices Meeting (IEDM)).

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - First cryogenic electro-optic switch on silicon with high bandwidth and low power tunability

AU - Eltes, Felix

AU - Barreto, Jorge

AU - Caimi, Daniele

AU - Karg, Siegfried F.

AU - Gentile, Antonio Andreas

AU - Hart, Andy

AU - Stark, Pascal

AU - Meier, Norbert

AU - Thompson, Mark

AU - Fompeyrine, Jean

AU - Abel, Stefan

PY - 2019/1/16

Y1 - 2019/1/16

N2 - We demonstrate the first electro-optic switch operating at cryogenic temperatures of 4 K with a high electrooptic bandwidth of > 18 GHz. Our novel technology exploits the Pockels effect in barium titanate thin films co-integrated with silicon photonics and offers low losses, pure phase modulation, and sub-pW electro-optic tuning.

AB - We demonstrate the first electro-optic switch operating at cryogenic temperatures of 4 K with a high electrooptic bandwidth of > 18 GHz. Our novel technology exploits the Pockels effect in barium titanate thin films co-integrated with silicon photonics and offers low losses, pure phase modulation, and sub-pW electro-optic tuning.

UR - https://www.scopus.com/pages/publications/85061837653

U2 - 10.1109/IEDM.2018.8614511

DO - 10.1109/IEDM.2018.8614511

M3 - Conference Contribution (Conference Proceeding)

AN - SCOPUS:85061837653

VL - 2018-December

T3 - IEEE International Electron Devices Meeting (IEDM)

SP - 23.1. 1-23.1. 4

BT - 2018 IEEE International Electron Devices Meeting (IEDM)

PB - Institute of Electrical and Electronics Engineers (IEEE)

T2 - 64th Annual IEEE International Electron Devices Meeting, IEDM 2018

Y2 - 1 December 2018 through 5 December 2018

ER -

Eltes F, Barreto J, Caimi D, Karg SF, Gentile AA, Hart A et al. First cryogenic electro-optic switch on silicon with high bandwidth and low power tunability. In 2018 IEEE International Electron Devices Meeting (IEDM). Vol. 2018-December. Institute of Electrical and Electronics Engineers (IEEE). 2019. p. 23.1. 1-23.1. 4. 8614511. (IEEE International Electron Devices Meeting (IEDM)). doi: 10.1109/IEDM.2018.8614511

First cryogenic electro-optic switch on silicon with high bandwidth and low power tunability

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