First principles calculations of the scattering cross section of substitutional carbon in silicon

M. P. Vaughan, S. Fahy

Research output: Contribution to journalArticle (Academic Journal)peer-review

1 Citation (Scopus)

Abstract

A method of calculating scattering cross-sections based on first principles electronic structure calculations, previously used for alloy scattering in SiGe is presented and applied to substitutional carbon in silicon. It is found that the intravalley scattering is the predominant scattering mechanism with a contribution to the scattering rate around a factor of 4 greater than intravalley alloy scattering in SiGe.

Original languageEnglish
Article number012003
JournalJournal of Physics: Conference Series
Volume242
DOIs
Publication statusPublished - 2010

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