First-principles investigation of the alloy scattering potential in dilute Si 1-xC x

M. P. Vaughan*, F. Murphy-Armando, S. Fahy

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

6 Citations (Scopus)

Abstract

A first-principles method is applied to find the intra and intervalley n-type carrier scattering rates for substitutional carbon in silicon. The method builds on a previously developed first-principles approach with the introduction of an interpolation technique to determine the intravalley scattering rates. Intravalley scattering is found to be the dominant alloy scattering process in Si 1-xC x, followed by g-type intervalley scattering. Mobility calculations show that alloy scattering due to substitutional C alone cannot account for the experimentally observed degradation of the mobility. We show that the incorporation of additional charged impurity scattering due to electrically active interstitial C complexes models this residual resistivity well.

Original languageEnglish
Article number165209
JournalPhysical Review B: Condensed Matter and Materials Physics
Volume85
Issue number16
DOIs
Publication statusPublished - 23 Apr 2012

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