Floating body effects in carbon doped GaN HEMTs

Martin H H Kuball; Michael J Uren; Alexander Pooth; Serge Karboyan; William Waller; Indranil Chatterjee

doi:10.1109/WiPDA.2015.7369271

Floating body effects in carbon doped GaN HEMTs

Martin H H Kuball, Michael J Uren, Alexander Pooth, Serge Karboyan, William Waller, Indranil Chatterjee

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

3 Citations (Scopus)

473 Downloads (Pure)

Abstract

GaN power HEMTs use carbon doped buffers to deliver high breakdown voltage and off-state low leakage; however these devices are highly vulnerable to dynamic dispersion. Carbon doped GaN has its Fermi level pinned 0.9eV above the valence band and in equilibrium would be isolated from the 2DEG by a reverse biased PN junction and hence would be electrically floating. In reality leakage across that junction and charge storage in the compensated deep acceptors controls the buffer potential, the dynamic on-resistance dispersion and the gate-drain breakdown voltage. We discuss experiment and simulation that supports the model that controlling leakage to the floating buffer is critical for power device operation.

Original language	English
Title of host publication	2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2015)
Subtitle of host publication	Proceedings of a meeting held 2-4 November 2015, Blacksburg, Virginia, USA
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	70-74
Number of pages	5
ISBN (Electronic)	9781467378857
ISBN (Print)	9781467378864
DOIs	https://doi.org/10.1109/WiPDA.2015.7369271
Publication status	Published - Feb 2016
Event	3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2015 - Blacksburg, United States Duration: 2 Nov 2015 → 4 Nov 2015

Conference

Conference	3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2015
Country/Territory	United States
City	Blacksburg
Period	2/11/15 → 4/11/15

Research Groups and Themes

CDTR

Keywords

breakdown voltage
current-collapse
dynamic Ron
FET
power switching

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10.1109/WiPDA.2015.7369271

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Kuball, M. H. H., Uren, M. J., Pooth, A., Karboyan, S., Waller, W., & Chatterjee, I. (2016). Floating body effects in carbon doped GaN HEMTs. In 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2015) : Proceedings of a meeting held 2-4 November 2015, Blacksburg, Virginia, USA (pp. 70-74). Article 7369271 Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/WiPDA.2015.7369271

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title = "Floating body effects in carbon doped GaN HEMTs",

abstract = "GaN power HEMTs use carbon doped buffers to deliver high breakdown voltage and off-state low leakage; however these devices are highly vulnerable to dynamic dispersion. Carbon doped GaN has its Fermi level pinned 0.9eV above the valence band and in equilibrium would be isolated from the 2DEG by a reverse biased PN junction and hence would be electrically floating. In reality leakage across that junction and charge storage in the compensated deep acceptors controls the buffer potential, the dynamic on-resistance dispersion and the gate-drain breakdown voltage. We discuss experiment and simulation that supports the model that controlling leakage to the floating buffer is critical for power device operation.",

keywords = "breakdown voltage, current-collapse, dynamic Ron, FET, power switching",

author = "Kuball, {Martin H H} and Uren, {Michael J} and Alexander Pooth and Serge Karboyan and William Waller and Indranil Chatterjee",

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booktitle = "2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2015)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

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note = "3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2015 ; Conference date: 02-11-2015 Through 04-11-2015",

}

Kuball, MHH , Uren, MJ, Pooth, A, Karboyan, S, Waller, W & Chatterjee, I 2016, Floating body effects in carbon doped GaN HEMTs. in 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2015) : Proceedings of a meeting held 2-4 November 2015, Blacksburg, Virginia, USA., 7369271, Institute of Electrical and Electronics Engineers (IEEE), pp. 70-74, 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2015, Blacksburg, United States, 2/11/15. https://doi.org/10.1109/WiPDA.2015.7369271

Floating body effects in carbon doped GaN HEMTs. / Kuball, Martin H H ; Uren, Michael J; Pooth, Alexander et al.
2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2015) : Proceedings of a meeting held 2-4 November 2015, Blacksburg, Virginia, USA. Institute of Electrical and Electronics Engineers (IEEE), 2016. p. 70-74 7369271.

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - Floating body effects in carbon doped GaN HEMTs

AU - Kuball, Martin H H

AU - Uren, Michael J

AU - Pooth, Alexander

AU - Karboyan, Serge

AU - Waller, William

AU - Chatterjee, Indranil

PY - 2016/2

Y1 - 2016/2

N2 - GaN power HEMTs use carbon doped buffers to deliver high breakdown voltage and off-state low leakage; however these devices are highly vulnerable to dynamic dispersion. Carbon doped GaN has its Fermi level pinned 0.9eV above the valence band and in equilibrium would be isolated from the 2DEG by a reverse biased PN junction and hence would be electrically floating. In reality leakage across that junction and charge storage in the compensated deep acceptors controls the buffer potential, the dynamic on-resistance dispersion and the gate-drain breakdown voltage. We discuss experiment and simulation that supports the model that controlling leakage to the floating buffer is critical for power device operation.

AB - GaN power HEMTs use carbon doped buffers to deliver high breakdown voltage and off-state low leakage; however these devices are highly vulnerable to dynamic dispersion. Carbon doped GaN has its Fermi level pinned 0.9eV above the valence band and in equilibrium would be isolated from the 2DEG by a reverse biased PN junction and hence would be electrically floating. In reality leakage across that junction and charge storage in the compensated deep acceptors controls the buffer potential, the dynamic on-resistance dispersion and the gate-drain breakdown voltage. We discuss experiment and simulation that supports the model that controlling leakage to the floating buffer is critical for power device operation.

KW - breakdown voltage

KW - current-collapse

KW - dynamic Ron

KW - FET

KW - power switching

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M3 - Conference Contribution (Conference Proceeding)

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SN - 9781467378864

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BT - 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2015)

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Y2 - 2 November 2015 through 4 November 2015

ER -

Kuball MHH , Uren MJ, Pooth A, Karboyan S, Waller W, Chatterjee I. Floating body effects in carbon doped GaN HEMTs. In 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2015) : Proceedings of a meeting held 2-4 November 2015, Blacksburg, Virginia, USA. Institute of Electrical and Electronics Engineers (IEEE). 2016. p. 70-74. 7369271 Epub 2015 Dec 30. doi: 10.1109/WiPDA.2015.7369271

Floating body effects in carbon doped GaN HEMTs

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