Floating body effects in carbon doped GaN HEMTs

Martin H H Kuball, Michael J Uren, Alexander Pooth, Serge Karboyan, William Waller, Indranil Chatterjee

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

3 Citations (Scopus)
334 Downloads (Pure)

Abstract

GaN power HEMTs use carbon doped buffers to deliver high breakdown voltage and off-state low leakage; however these devices are highly vulnerable to dynamic dispersion. Carbon doped GaN has its Fermi level pinned 0.9eV above the valence band and in equilibrium would be isolated from the 2DEG by a reverse biased PN junction and hence would be electrically floating. In reality leakage across that junction and charge storage in the compensated deep acceptors controls the buffer potential, the dynamic on-resistance dispersion and the gate-drain breakdown voltage. We discuss experiment and simulation that supports the model that controlling leakage to the floating buffer is critical for power device operation.
Original languageEnglish
Title of host publication2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2015)
Subtitle of host publicationProceedings of a meeting held 2-4 November 2015, Blacksburg, Virginia, USA
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages70-74
Number of pages5
ISBN (Electronic)9781467378857
ISBN (Print)9781467378864
DOIs
Publication statusPublished - Feb 2016
Event3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2015 - Blacksburg, United States
Duration: 2 Nov 20154 Nov 2015

Conference

Conference3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2015
CountryUnited States
CityBlacksburg
Period2/11/154/11/15

Structured keywords

  • CDTR

Keywords

  • breakdown voltage
  • current-collapse
  • dynamic Ron
  • FET
  • power switching

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