Floating substrate luminescence from silicon rich oxide metal-oxide-semiconductor devices

A. Morales-Sánchez; C. Domínguez; J. Barreto; M. Aceves-Mijares; L. Licea-Jiménez; J. A. Luna-López; J. Carrillo

doi:10.1016/j.tsf.2013.01.076

Floating substrate luminescence from silicon rich oxide metal-oxide-semiconductor devices

A. Morales-Sánchez^*, C. Domínguez, J. Barreto, M. Aceves-Mijares, L. Licea-Jiménez, J. A. Luna-López, J. Carrillo

^*Corresponding author for this work

Research output: Contribution to journal › Article (Academic Journal) › peer-review

4 Citations (Scopus)

Abstract

The electro-optical properties of metal-oxide-semiconductor devices with embedded Si nanoparticles in silicon-rich (4 at.%) oxide films have been studied. Devices show intense visible continuous luminescence not only in the regular metal-oxide-semiconductor configuration, but when biased via surface electrodes (floating substrate) separated 10 μm. Electroluminescence manifests as extremely bright randomly scattered discrete spots on the gate area or the periphery of the devices depending on the bias direction. The mechanism responsible for the surface-electroluminescence has been related to the recombination of electron-hole pairs injected through enhanced current paths within the silicon-rich oxide film.

Original language	English
Pages (from-to)	442-445
Number of pages	4
Journal	Thin Solid Films
Volume	531
DOIs	https://doi.org/10.1016/j.tsf.2013.01.076
Publication status	Published - 2013

Research Groups and Themes

Photonics and Quantum

Keywords

Electroluminescence
Luminescent spots
Silicon-nanoparticles
Silicon-rich oxide

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title = "Floating substrate luminescence from silicon rich oxide metal-oxide-semiconductor devices",

abstract = "The electro-optical properties of metal-oxide-semiconductor devices with embedded Si nanoparticles in silicon-rich (4 at.%) oxide films have been studied. Devices show intense visible continuous luminescence not only in the regular metal-oxide-semiconductor configuration, but when biased via surface electrodes (floating substrate) separated 10 μm. Electroluminescence manifests as extremely bright randomly scattered discrete spots on the gate area or the periphery of the devices depending on the bias direction. The mechanism responsible for the surface-electroluminescence has been related to the recombination of electron-hole pairs injected through enhanced current paths within the silicon-rich oxide film.",

keywords = "Electroluminescence, Luminescent spots, Silicon-nanoparticles, Silicon-rich oxide",

author = "A. Morales-S{\'a}nchez and C. Dom{\'i}nguez and J. Barreto and M. Aceves-Mijares and L. Licea-Jim{\'e}nez and Luna-L{\'o}pez, {J. A.} and J. Carrillo",

year = "2013",

doi = "10.1016/j.tsf.2013.01.076",

language = "English",

volume = "531",

pages = "442--445",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Amsterdam:Elsevier",

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TY - JOUR

T1 - Floating substrate luminescence from silicon rich oxide metal-oxide-semiconductor devices

AU - Morales-Sánchez, A.

AU - Domínguez, C.

AU - Barreto, J.

AU - Aceves-Mijares, M.

AU - Licea-Jiménez, L.

AU - Luna-López, J. A.

AU - Carrillo, J.

PY - 2013

Y1 - 2013

N2 - The electro-optical properties of metal-oxide-semiconductor devices with embedded Si nanoparticles in silicon-rich (4 at.%) oxide films have been studied. Devices show intense visible continuous luminescence not only in the regular metal-oxide-semiconductor configuration, but when biased via surface electrodes (floating substrate) separated 10 μm. Electroluminescence manifests as extremely bright randomly scattered discrete spots on the gate area or the periphery of the devices depending on the bias direction. The mechanism responsible for the surface-electroluminescence has been related to the recombination of electron-hole pairs injected through enhanced current paths within the silicon-rich oxide film.

AB - The electro-optical properties of metal-oxide-semiconductor devices with embedded Si nanoparticles in silicon-rich (4 at.%) oxide films have been studied. Devices show intense visible continuous luminescence not only in the regular metal-oxide-semiconductor configuration, but when biased via surface electrodes (floating substrate) separated 10 μm. Electroluminescence manifests as extremely bright randomly scattered discrete spots on the gate area or the periphery of the devices depending on the bias direction. The mechanism responsible for the surface-electroluminescence has been related to the recombination of electron-hole pairs injected through enhanced current paths within the silicon-rich oxide film.

KW - Electroluminescence

KW - Luminescent spots

KW - Silicon-nanoparticles

KW - Silicon-rich oxide

UR - http://www.scopus.com/inward/record.url?scp=84875436644&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2013.01.076

DO - 10.1016/j.tsf.2013.01.076

M3 - Article (Academic Journal)

AN - SCOPUS:84875436644

SN - 0040-6090

VL - 531

SP - 442

EP - 445

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Floating substrate luminescence from silicon rich oxide metal-oxide-semiconductor devices

Abstract

Research Groups and Themes

Keywords

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