Floating substrate luminescence from silicon rich oxide metal-oxide-semiconductor devices

A. Morales-Sánchez*, C. Domínguez, J. Barreto, M. Aceves-Mijares, L. Licea-Jiménez, J. A. Luna-López, J. Carrillo

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

3 Citations (Scopus)

Abstract

The electro-optical properties of metal-oxide-semiconductor devices with embedded Si nanoparticles in silicon-rich (4 at.%) oxide films have been studied. Devices show intense visible continuous luminescence not only in the regular metal-oxide-semiconductor configuration, but when biased via surface electrodes (floating substrate) separated 10 μm. Electroluminescence manifests as extremely bright randomly scattered discrete spots on the gate area or the periphery of the devices depending on the bias direction. The mechanism responsible for the surface-electroluminescence has been related to the recombination of electron-hole pairs injected through enhanced current paths within the silicon-rich oxide film.

Original languageEnglish
Pages (from-to)442-445
Number of pages4
JournalThin Solid Films
Volume531
DOIs
Publication statusPublished - 2013

Keywords

  • Electroluminescence
  • Luminescent spots
  • Silicon-nanoparticles
  • Silicon-rich oxide

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