Focused ion beam-based fabrication of nanostructured photonic devices

MJ Cryan, MT Hill, Cortaberria Sanz,, P Ivanov, PJ Heard, L Tian, S Yu, JM Rorison

Research output: Contribution to journalArticle (Academic Journal)peer-review

46 Citations (Scopus)
211 Downloads (Pure)


This paper presents results for focused ion beam (FIB) processing of two photonic devices: 1) a GaN laser with a fourth-order grating for vertical emission, and 2) a two-dimensional (2-D) photonic crystal (PhC) structure. For the GaN laser, both L-I and I-V results are shown before and after etching, and vertical emitted power as a function of the distance along grating is shown. A finite element (FE)-based electromagnetic model is developed to support the measured results and is used to predict the optimum grating depth. For the 2-D photonic crystal, direct FIB etching is used to create a PhC in a standard InP waveguide structure. Measured and modeled transmission results are compared, and there is good agreement for band edge position. A detailed study of hole shape is presented, and this leads to the development of a multistage etching procedure involving both reactive ion etching and inductively coupled plasma etching. This results in a much improved hole shape.
Translated title of the contributionFocused ion beam-based fabrication of nanostructured photonic devices
Original languageEnglish
Pages (from-to)1266 - 1277
Number of pages12
JournalIEEE Journal of Selected Topics in Quantum Electronics
Issue number6
Publication statusPublished - Nov 2006

Bibliographical note

Publisher: IEEE

Structured keywords

  • Photonics and Quantum


  • focused ion beam (FIB),
  • photonic crystals (PhCs)
  • gratings


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