Focused ion beam etching for the fabrication of micropillar microcavities made of III-V semiconductor materials

Y-LD Ho; R Gibson; C Hu; MJ Cryan; JG Rarity; PJ Heard; JA Timpson; AM Fox; MS Skolnick; M Hopkinson; A Tahraoui

doi:10.1116/1.2749528

Focused ion beam etching for the fabrication of micropillar microcavities made of III-V semiconductor materials

Y-LD Ho, R Gibson, C Hu, MJ Cryan, JG Rarity, PJ Heard, JA Timpson, AM Fox, MS Skolnick, M Hopkinson, A Tahraoui

Research output: Contribution to journal › Article (Academic Journal) › peer-review

11 Citations (Scopus)

Translated title of the contribution	Focused ion beam etching for the fabrication of micropillar microcavities made of III-V semiconductor materials
Original language	English
Pages (from-to)	1197 - 1202
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	25(4)
DOIs	https://doi.org/10.1116/1.2749528
Publication status	Published - Jun 2007

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10.1116/1.2749528

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Ho, Y-LD., Gibson, R., Hu, C., Cryan, MJ., Rarity, JG., Heard, PJ., Timpson, JA., Fox, AM., Skolnick, MS., Hopkinson, M., & Tahraoui, A. (2007). Focused ion beam etching for the fabrication of micropillar microcavities made of III-V semiconductor materials. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 25(4), 1197 - 1202. https://doi.org/10.1116/1.2749528

Ho, Y-LD ; Gibson, R ; Hu, C ; Cryan, MJ ; Rarity, JG ; Heard, PJ ; Timpson, JA ; Fox, AM ; Skolnick, MS ; Hopkinson, M ; Tahraoui, A. / Focused ion beam etching for the fabrication of micropillar microcavities made of III-V semiconductor materials. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2007 ; Vol. 25(4). pp. 1197 - 1202.

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title = "Focused ion beam etching for the fabrication of micropillar microcavities made of III-V semiconductor materials",

author = "Y-LD Ho and R Gibson and C Hu and MJ Cryan and JG Rarity and PJ Heard and JA Timpson and AM Fox and MS Skolnick and M Hopkinson and A Tahraoui",

year = "2007",

month = jun,

doi = "10.1116/1.2749528",

language = "English",

volume = "25(4)",

pages = "1197 -- 1202",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

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Ho, Y-LD, Gibson, R, Hu, C, Cryan, MJ , Rarity, JG , Heard, PJ, Timpson, JA, Fox, AM, Skolnick, MS, Hopkinson, M & Tahraoui, A 2007, 'Focused ion beam etching for the fabrication of micropillar microcavities made of III-V semiconductor materials', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 25(4), pp. 1197 - 1202. https://doi.org/10.1116/1.2749528

Focused ion beam etching for the fabrication of micropillar microcavities made of III-V semiconductor materials. / Ho, Y-LD; Gibson, R; Hu, C; Cryan, MJ ; Rarity, JG ; Heard, PJ; Timpson, JA; Fox, AM; Skolnick, MS; Hopkinson, M; Tahraoui, A.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 25(4), 06.2007, p. 1197 - 1202.

Research output: Contribution to journal › Article (Academic Journal) › peer-review

TY - JOUR

T1 - Focused ion beam etching for the fabrication of micropillar microcavities made of III-V semiconductor materials

AU - Ho, Y-LD

AU - Gibson, R

AU - Hu, C

AU - Cryan, MJ

AU - Rarity, JG

AU - Heard, PJ

AU - Timpson, JA

AU - Fox, AM

AU - Skolnick, MS

AU - Hopkinson, M

AU - Tahraoui, A

PY - 2007/6

Y1 - 2007/6

U2 - 10.1116/1.2749528

DO - 10.1116/1.2749528

M3 - Article (Academic Journal)

VL - 25(4)

SP - 1197

EP - 1202

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

SN - 1071-1023

ER -