Focused ion beam etching of nanometer-size GaN/AlGaN device structures and their optical characterization by micro-photoluminescence/Raman mapping

MHH Kuball; M Benyoucef; FHJ Morrissey; CT Foxon

Focused ion beam etching of nanometer-size GaN/AlGaN device structures and their optical characterization by micro-photoluminescence/Raman mapping

MHH Kuball, M Benyoucef, FHJ Morrissey, CT Foxon

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

Translated title of the contribution	Focused ion beam etching of nanometer-size GaN/AlGaN device structures and their optical characterization by micro-photoluminescence/Raman mapping
Original language	English
Article number	W12
Pages (from-to)	3 - 3
Number of pages	1
Journal	MRS Internet J. Nitride Semicond. Res
Volume	5S1
Publication status	Published - 2000

Bibliographical note

Publisher: Materials Research Society

Structured keywords

CDTR

Cite this

@article{6b447f71485b4595a9c7fc06ef4151fe,

title = "Focused ion beam etching of nanometer-size GaN/AlGaN device structures and their optical characterization by micro-photoluminescence/Raman mapping",

author = "MHH Kuball and M Benyoucef and FHJ Morrissey and CT Foxon",

note = "Publisher: Materials Research Society",

year = "2000",

language = "English",

volume = "5S1",

pages = "3 -- 3",

journal = "MRS Internet Journal of Nitride Semiconductor Research",

issn = "1092-5783",

publisher = "Materials Research Society",

}

TY - JOUR

T1 - Focused ion beam etching of nanometer-size GaN/AlGaN device structures and their optical characterization by micro-photoluminescence/Raman mapping

AU - Kuball, MHH

AU - Benyoucef, M

AU - Morrissey, FHJ

AU - Foxon, CT

N1 - Publisher: Materials Research Society

PY - 2000

Y1 - 2000

M3 - Article (Academic Journal)

VL - 5S1

SP - 3

EP - 3

JO - MRS Internet Journal of Nitride Semiconductor Research

JF - MRS Internet Journal of Nitride Semiconductor Research

SN - 1092-5783

M1 - W12

ER -