Formalised method for effecting multiple modes in single MOS gatedpower devices

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Translated title of the contribution	Formalised method for effecting multiple modes in single MOS gatedpower devices
Original language	English
Pages (from-to)	203 - 209
Number of pages	7
Journal	IEE Proceedings: Circuits, Devices and Systems
Volume	146 (4)
DOIs	https://doi.org/10.1049/ip-cds:19990315
Publication status	Published - Aug 1999

Publisher: Institution of Electrical Engineers (IEE)

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@article{a0e8afe7dbce4e4883c2cded7e0f1fe0,

title = "Formalised method for effecting multiple modes in single MOS gatedpower devices",

author = "BH Stark and PR Palmer",

note = "Publisher: Institution of Electrical Engineers (IEE)",

year = "1999",

month = aug,

doi = "10.1049/ip-cds:19990315",

language = "English",

volume = "146 (4)",

pages = "203 -- 209",

journal = "IEE Proceedings: Circuits, Devices and Systems",

issn = "1350-2409",

publisher = "Institution of Engineering and Technology (IET)",

}

TY - JOUR

T1 - Formalised method for effecting multiple modes in single MOS gatedpower devices

AU - Stark, BH

AU - Palmer, PR

N1 - Publisher: Institution of Electrical Engineers (IEE)

PY - 1999/8

Y1 - 1999/8

U2 - 10.1049/ip-cds:19990315

DO - 10.1049/ip-cds:19990315

M3 - Article (Academic Journal)

SN - 1350-2409

VL - 146 (4)

SP - 203

EP - 209

JO - IEE Proceedings: Circuits, Devices and Systems

JF - IEE Proceedings: Circuits, Devices and Systems

ER -