Free nucleation of aluminiumm nitride single crystals in HPBN crucible by sublimation

B Liu; JH Edgar; B Raghothamachar; M Dudley; JY Lin; HX Jiang; A Sarua; M Kuball

Free nucleation of aluminiumm nitride single crystals in HPBN crucible by sublimation

B Liu
, JH Edgar
, B Raghothamachar
, M Dudley
, JY Lin
, HX Jiang
, A Sarua
, M Kuball

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

Abstract

Clear and colorless aluminum nitride (AIN) single crystal thin platelets up to 60mm(2) were prepared at 2100degreesC and 800Torr in hot-pressed boron nitride (HPBN) crucibles by free nucleation in a graphite furnace. Crystals grown in HPBN crucibles typically form thin platelets with the fastest growth rate (above 400 mum/h) occurring in the c-axis direction. Growth striations frequently run the length of the crystals, probably due to the presence of boron in the growth environment. Raman spectra and X-ray topography reveal that the crystals have good structural quality. Emissions peaks around 4.10 eV, 3.90 eV, and 3.70 eV were observed in the photoluminescence spectrum, suggesting that boron from the boron nitride crucible may incorporate into the AIN crystals as hexagonal boron nitride.

Translated title of the contribution	Free nucleation of aluminiumm nitride single crystals in HPBN crucible by sublimation
Original language	English
Pages (from-to)	99 - 104
Number of pages	6
Journal	Materials Science and Engineering: B
Volume	117 (1)
Publication status	Published - 2005

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Publisher: Elsevier Science SA

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@article{0654c11c94cb4ddfb29f4f3b090856cd,

title = "Free nucleation of aluminiumm nitride single crystals in HPBN crucible by sublimation",

abstract = "Clear and colorless aluminum nitride (AIN) single crystal thin platelets up to 60mm(2) were prepared at 2100degreesC and 800Torr in hot-pressed boron nitride (HPBN) crucibles by free nucleation in a graphite furnace. Crystals grown in HPBN crucibles typically form thin platelets with the fastest growth rate (above 400 mum/h) occurring in the c-axis direction. Growth striations frequently run the length of the crystals, probably due to the presence of boron in the growth environment. Raman spectra and X-ray topography reveal that the crystals have good structural quality. Emissions peaks around 4.10 eV, 3.90 eV, and 3.70 eV were observed in the photoluminescence spectrum, suggesting that boron from the boron nitride crucible may incorporate into the AIN crystals as hexagonal boron nitride.",

author = "B Liu and JH Edgar and B Raghothamachar and M Dudley and JY Lin and HX Jiang and A Sarua and M Kuball",

note = "Publisher: Elsevier Science SA",

year = "2005",

language = "English",

volume = "117 (1)",

pages = "99 -- 104",

journal = "Materials Science and Engineering: B",

issn = "0921-5107",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Free nucleation of aluminiumm nitride single crystals in HPBN crucible by sublimation

AU - Liu, B

AU - Edgar, JH

AU - Raghothamachar, B

AU - Dudley, M

AU - Lin, JY

AU - Jiang, HX

AU - Sarua, A

AU - Kuball, M

N1 - Publisher: Elsevier Science SA

PY - 2005

Y1 - 2005

N2 - Clear and colorless aluminum nitride (AIN) single crystal thin platelets up to 60mm(2) were prepared at 2100degreesC and 800Torr in hot-pressed boron nitride (HPBN) crucibles by free nucleation in a graphite furnace. Crystals grown in HPBN crucibles typically form thin platelets with the fastest growth rate (above 400 mum/h) occurring in the c-axis direction. Growth striations frequently run the length of the crystals, probably due to the presence of boron in the growth environment. Raman spectra and X-ray topography reveal that the crystals have good structural quality. Emissions peaks around 4.10 eV, 3.90 eV, and 3.70 eV were observed in the photoluminescence spectrum, suggesting that boron from the boron nitride crucible may incorporate into the AIN crystals as hexagonal boron nitride.

AB - Clear and colorless aluminum nitride (AIN) single crystal thin platelets up to 60mm(2) were prepared at 2100degreesC and 800Torr in hot-pressed boron nitride (HPBN) crucibles by free nucleation in a graphite furnace. Crystals grown in HPBN crucibles typically form thin platelets with the fastest growth rate (above 400 mum/h) occurring in the c-axis direction. Growth striations frequently run the length of the crystals, probably due to the presence of boron in the growth environment. Raman spectra and X-ray topography reveal that the crystals have good structural quality. Emissions peaks around 4.10 eV, 3.90 eV, and 3.70 eV were observed in the photoluminescence spectrum, suggesting that boron from the boron nitride crucible may incorporate into the AIN crystals as hexagonal boron nitride.

M3 - Article (Academic Journal)

SN - 0921-5107

VL - 117 (1)

SP - 99

EP - 104

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

ER -

Free nucleation of aluminiumm nitride single crystals in HPBN crucible by sublimation

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