Fully Microelectromechanical Non-Volatile Memory Cell

Elliott Worsey; Qi Tang; Mukesh Kumar Kulsreshath; I D B Pamunuwa

doi:10.1109/MEMS49605.2023.10052290

Fully Microelectromechanical Non-Volatile Memory Cell

Elliott Worsey, Qi Tang, Mukesh Kumar Kulsreshath, I D B Pamunuwa

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

6 Citations (Scopus)

207 Downloads (Pure)

Abstract

This paper reports the first non-volatile memory cell composed entirely of MEM relays that does not need CMOS circuitry for reading or writing. The cell uses a 7-terminal non-volatile relay for information storage and two 3-terminal relays for read and write access. This three-relay cell has been fabricated and characterised to demonstrate read and write operations. The cell architecture has been designed such that multiple cells can be tiled in combination with a relay-based multiplexer to make a digital all MEM reprogrammable non-volatile memory. Such a memory will have near zero standby power and ability to operate in harsh environments beyond the capabilities of conventional memory technologies.

Original language	English
Title of host publication	2023 IEEE 36th International Conference on Micro Electro Mechanical Systems, MEMS 2023
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	507-510
Number of pages	4
ISBN (Electronic)	978-1-6654-9308-6
ISBN (Print)	978-1-6654-9309-3
DOIs	https://doi.org/10.1109/MEMS49605.2023.10052290
Publication status	Published - 1 Mar 2023
Event	The 36th International Conference on Micro Electro Mechanical Systems - Walther-von-Dyck Straße 10 85748 Garching bei München Germany, Munich, Germany Duration: 15 Jan 2023 → 19 Jan 2023 Conference number: 49605X https://mems23.org/

Publication series

Name	Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
Volume	2023-January
ISSN (Print)	1084-6999

Conference

Conference	The 36th International Conference on Micro Electro Mechanical Systems
Abbreviated title	IEEE MEMS 2023
Country/Territory	Germany
City	Munich
Period	15/01/23 → 19/01/23
Internet address	https://mems23.org/

Bibliographical note

Funding Information:
This work received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement No 871740 (ZeroAMP).

Publisher Copyright:
© 2023 IEEE.

Research Groups and Themes

Photonics and Quantum

Keywords

MEMS
Microswitches
Nonvolatile memory
Radiation hardening (electronics)
High-temperature

Access to Document

10.1109/MEMS49605.2023.10052290

Full-text PDF (accepted manuscript)
This is the accepted author manuscript (AAM). The final published version (version of record) is available online via IEEE at https://ieeexplore.ieee.org/document/10052290. Please refer to any applicable terms of use of the publisher.
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6 Citations
2 Article (Academic Journal)

Energy Consumption in Micro-and Nanoelectromechanical Relays
Tang, Q., Worsey, E., Kulsreshath, M. K., Fan, Y., Li, Y., Bleiker, S., Chong, H., Niklaus, F. & Pamunuwa, I. D. B., 1 Apr 2025, In: IEEE Transactions on Electron Devices. 72, 4, p. 1969-1976 8 p.
Research output: Contribution to journal › Article (Academic Journal) › peer-review

Open Access
File
28 Downloads (Pure)
Digital Nanoelectromechanical Non-Volatile Memory Cell
Kulsreshath, M. K., Tang, Q., Worsey, E., Bala Krishnan, M., Li, Y., Bleiker, S., Niklaus, F. & Pamunuwa, I. D. B., 1 Apr 2024, In: IEEE Electron Device Letters. 45, 4, p. 728-731 4 p.
Research output: Contribution to journal › Article (Academic Journal) › peer-review

Open Access
File
4 Citations (Scopus)

148 Downloads (Pure)

Cite this

Worsey, E., Tang, Q., Kulsreshath, M. K., & Pamunuwa, I. D. B. (2023). Fully Microelectromechanical Non-Volatile Memory Cell. In 2023 IEEE 36th International Conference on Micro Electro Mechanical Systems, MEMS 2023 (pp. 507-510). (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS); Vol. 2023-January). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/MEMS49605.2023.10052290

Worsey, Elliott ; Tang, Qi ; Kulsreshath, Mukesh Kumar et al. / Fully Microelectromechanical Non-Volatile Memory Cell. 2023 IEEE 36th International Conference on Micro Electro Mechanical Systems, MEMS 2023. Institute of Electrical and Electronics Engineers (IEEE), 2023. pp. 507-510 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)).

@inproceedings{56fffabd16294110b8a8d9ec29ad8a8d,

title = "Fully Microelectromechanical Non-Volatile Memory Cell",

abstract = "This paper reports the first non-volatile memory cell composed entirely of MEM relays that does not need CMOS circuitry for reading or writing. The cell uses a 7-terminal non-volatile relay for information storage and two 3-terminal relays for read and write access. This three-relay cell has been fabricated and characterised to demonstrate read and write operations. The cell architecture has been designed such that multiple cells can be tiled in combination with a relay-based multiplexer to make a digital all MEM reprogrammable non-volatile memory. Such a memory will have near zero standby power and ability to operate in harsh environments beyond the capabilities of conventional memory technologies.",

keywords = "MEMS, Microswitches, Nonvolatile memory, Radiation hardening (electronics), High-temperature",

author = "Elliott Worsey and Qi Tang and Kulsreshath, \{Mukesh Kumar\} and Pamunuwa, \{I D B\}",

note = "Funding Information: This work received funding from the European Union{\textquoteright}s Horizon 2020 research and innovation programme under grant agreement No 871740 (ZeroAMP). Publisher Copyright: {\textcopyright} 2023 IEEE.; The 36th International Conference on Micro Electro Mechanical Systems, IEEE MEMS 2023 ; Conference date: 15-01-2023 Through 19-01-2023",

year = "2023",

month = mar,

day = "1",

doi = "10.1109/MEMS49605.2023.10052290",

language = "English",

isbn = "978-1-6654-9309-3",

series = "Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

pages = "507--510",

booktitle = "2023 IEEE 36th International Conference on Micro Electro Mechanical Systems, MEMS 2023",

address = "United States",

url = "https://mems23.org/",

}

Worsey, E, Tang, Q, Kulsreshath, MK & Pamunuwa, IDB 2023, Fully Microelectromechanical Non-Volatile Memory Cell. in 2023 IEEE 36th International Conference on Micro Electro Mechanical Systems, MEMS 2023. Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), vol. 2023-January, Institute of Electrical and Electronics Engineers (IEEE), pp. 507-510, The 36th International Conference on Micro Electro Mechanical Systems, Munich, Bavaria, Germany, 15/01/23. https://doi.org/10.1109/MEMS49605.2023.10052290

Fully Microelectromechanical Non-Volatile Memory Cell. / Worsey, Elliott; Tang, Qi; Kulsreshath, Mukesh Kumar et al.
2023 IEEE 36th International Conference on Micro Electro Mechanical Systems, MEMS 2023. Institute of Electrical and Electronics Engineers (IEEE), 2023. p. 507-510 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS); Vol. 2023-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - Fully Microelectromechanical Non-Volatile Memory Cell

AU - Worsey, Elliott

AU - Tang, Qi

AU - Kulsreshath, Mukesh Kumar

AU - Pamunuwa, I D B

N1 - Conference code: 49605X

PY - 2023/3/1

Y1 - 2023/3/1

N2 - This paper reports the first non-volatile memory cell composed entirely of MEM relays that does not need CMOS circuitry for reading or writing. The cell uses a 7-terminal non-volatile relay for information storage and two 3-terminal relays for read and write access. This three-relay cell has been fabricated and characterised to demonstrate read and write operations. The cell architecture has been designed such that multiple cells can be tiled in combination with a relay-based multiplexer to make a digital all MEM reprogrammable non-volatile memory. Such a memory will have near zero standby power and ability to operate in harsh environments beyond the capabilities of conventional memory technologies.

AB - This paper reports the first non-volatile memory cell composed entirely of MEM relays that does not need CMOS circuitry for reading or writing. The cell uses a 7-terminal non-volatile relay for information storage and two 3-terminal relays for read and write access. This three-relay cell has been fabricated and characterised to demonstrate read and write operations. The cell architecture has been designed such that multiple cells can be tiled in combination with a relay-based multiplexer to make a digital all MEM reprogrammable non-volatile memory. Such a memory will have near zero standby power and ability to operate in harsh environments beyond the capabilities of conventional memory technologies.

KW - MEMS

KW - Microswitches

KW - Nonvolatile memory

KW - Radiation hardening (electronics)

KW - High-temperature

U2 - 10.1109/MEMS49605.2023.10052290

DO - 10.1109/MEMS49605.2023.10052290

M3 - Conference Contribution (Conference Proceeding)

SN - 978-1-6654-9309-3

T3 - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

SP - 507

EP - 510

BT - 2023 IEEE 36th International Conference on Micro Electro Mechanical Systems, MEMS 2023

PB - Institute of Electrical and Electronics Engineers (IEEE)

T2 - The 36th International Conference on Micro Electro Mechanical Systems

Y2 - 15 January 2023 through 19 January 2023

ER -

Worsey E, Tang Q, Kulsreshath MK , Pamunuwa IDB. Fully Microelectromechanical Non-Volatile Memory Cell. In 2023 IEEE 36th International Conference on Micro Electro Mechanical Systems, MEMS 2023. Institute of Electrical and Electronics Engineers (IEEE). 2023. p. 507-510. (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)). doi: 10.1109/MEMS49605.2023.10052290

Fully Microelectromechanical Non-Volatile Memory Cell

Abstract

Publication series

Conference

Bibliographical note

Research Groups and Themes

Keywords

Access to Document

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Fingerprint

Research output

Energy Consumption in Micro-and Nanoelectromechanical Relays

Digital Nanoelectromechanical Non-Volatile Memory Cell

Cite this