GaAs-based dilute bismide semiconductor lasers: Theory vs. experiment

Christopher A Broderick, Judy Rorison, Igor P. Marko, Stephen J. Sweeney, Eoin P. O’Reilly

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

1 Citation (Scopus)
315 Downloads (Pure)

Abstract

We present a theoretical analysis of the electronic and optical properties of near-infrared dilute bismide quantum well (QW) lasers grown on GaAs substrates. Our theoretical model is based upon a 12-band kp Hamiltonian which explicitly incorporates the strong Bi-induced modifications of the band structure in pseudomorphically strained GaBixAs1􀀀x alloys. We outline the impact of Bi on the gain characteristics of ideal GaBixAs1􀀀x/(Al)GaAs devices, compare the results of our theoretical calculations to experimental measurements of the spontaneous emission (SE) and optical gain – a first for this emerging material system – and demonstrate quantitative agreement between theory and experiment. Through our theoretical analysis we further demonstrate that this novel class of III-V semiconductor alloys has strong potential for the development of highly efficient GaAs-based semiconductor lasers which promise to deliver uncooled operation at 1.55 m.
Original languageEnglish
Title of host publication2016 16th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2016)
Subtitle of host publicationProceedings of a meeting held 11-15 July 2016, Sydney, Australia
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages209-210
Number of pages2
ISBN (Electronic)9781467386036
ISBN (Print)9781467386043
DOIs
Publication statusPublished - Sep 2016
EventNumerical Simulation of Optoelectronic Devices - University of Sydney, Sydney, Australia
Duration: 11 Jul 201615 Jul 2016

Publication series

NameProceedings of the International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
ISSN (Print)2158-3234

Conference

ConferenceNumerical Simulation of Optoelectronic Devices
Abbreviated titleNUSOD
CountryAustralia
CitySydney
Period11/07/1615/07/16

Fingerprint Dive into the research topics of 'GaAs-based dilute bismide semiconductor lasers: Theory vs. experiment'. Together they form a unique fingerprint.

Cite this