Projects per year
Abstract
We present a theoretical analysis of the electronic and optical properties of near-infrared dilute bismide quantum well (QW) lasers grown on GaAs substrates. Our theoretical model is based upon a 12-band kp Hamiltonian which explicitly incorporates the strong Bi-induced modifications of the band structure in pseudomorphically strained GaBixAs1􀀀x alloys. We outline the impact of Bi on the gain characteristics of ideal GaBixAs1􀀀x/(Al)GaAs devices, compare the results of our theoretical calculations to experimental measurements of the spontaneous emission (SE) and optical gain – a first for this emerging material system – and demonstrate quantitative agreement between theory and experiment. Through our theoretical analysis we further demonstrate that this novel class of III-V semiconductor alloys has strong potential for the development of highly efficient GaAs-based semiconductor lasers which promise to deliver uncooled operation at 1.55 m.
Original language | English |
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Title of host publication | 2016 16th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2016) |
Subtitle of host publication | Proceedings of a meeting held 11-15 July 2016, Sydney, Australia |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Pages | 209-210 |
Number of pages | 2 |
ISBN (Electronic) | 9781467386036 |
ISBN (Print) | 9781467386043 |
DOIs | |
Publication status | Published - Sept 2016 |
Event | Numerical Simulation of Optoelectronic Devices - University of Sydney, Sydney, Australia Duration: 11 Jul 2016 → 15 Jul 2016 |
Publication series
Name | Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) |
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Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
ISSN (Print) | 2158-3234 |
Conference
Conference | Numerical Simulation of Optoelectronic Devices |
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Abbreviated title | NUSOD |
Country/Territory | Australia |
City | Sydney |
Period | 11/07/16 → 15/07/16 |
Research Groups and Themes
- Photonics and Quantum
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Dive into the research topics of 'GaAs-based dilute bismide semiconductor lasers: Theory vs. experiment'. Together they form a unique fingerprint.Projects
- 1 Finished
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Semiconductor III-V Quantum-Dot Solar Cells on Silicon Substrates
Rorison, J. M. (Principal Investigator)
1/07/13 → 30/06/17
Project: Research