GaAs-based dilute bismide semiconductor lasers: Theory vs. experiment

Christopher A Broderick; Judy Rorison; Igor P. Marko; Stephen J. Sweeney; Eoin P. O’Reilly

doi:10.1109/NUSOD.2016.7546999

GaAs-based dilute bismide semiconductor lasers: Theory vs. experiment

Christopher A Broderick, Judy Rorison, Igor P. Marko, Stephen J. Sweeney, Eoin P. O’Reilly

Cabot Institute for the Environment

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

2 Citations (Scopus)

483 Downloads (Pure)

Abstract

We present a theoretical analysis of the electronic and optical properties of near-infrared dilute bismide quantum well (QW) lasers grown on GaAs substrates. Our theoretical model is based upon a 12-band kp Hamiltonian which explicitly incorporates the strong Bi-induced modifications of the band structure in pseudomorphically strained GaBixAs1􀀀x alloys. We outline the impact of Bi on the gain characteristics of ideal GaBixAs1􀀀x/(Al)GaAs devices, compare the results of our theoretical calculations to experimental measurements of the spontaneous emission (SE) and optical gain – a first for this emerging material system – and demonstrate quantitative agreement between theory and experiment. Through our theoretical analysis we further demonstrate that this novel class of III-V semiconductor alloys has strong potential for the development of highly efficient GaAs-based semiconductor lasers which promise to deliver uncooled operation at 1.55 m.

Original language	English
Title of host publication	2016 16th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2016)
Subtitle of host publication	Proceedings of a meeting held 11-15 July 2016, Sydney, Australia
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	209-210
Number of pages	2
ISBN (Electronic)	9781467386036
ISBN (Print)	9781467386043
DOIs	https://doi.org/10.1109/NUSOD.2016.7546999
Publication status	Published - Sept 2016
Event	Numerical Simulation of Optoelectronic Devices - University of Sydney, Sydney, Australia Duration: 11 Jul 2016 → 15 Jul 2016

Publication series

Name	Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
ISSN (Print)	2158-3234

Conference

Conference	Numerical Simulation of Optoelectronic Devices
Abbreviated title	NUSOD
Country/Territory	Australia
City	Sydney
Period	11/07/16 → 15/07/16

Research Groups and Themes

Photonics and Quantum

Access to Document

10.1109/NUSOD.2016.7546999

Full-text PDF (accepted author manuscript)
This is the author accepted manuscript (AAM). The final published version (version of record) is available online via NUSOD at http://www.nusod.org/2016/conf_program.html. Please refer to any applicable terms of use of the publisher.
Accepted author manuscript, 253 KB

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Persistent link

Semiconductor III-V Quantum-Dot Solar Cells on Silicon Substrates
Rorison, J. M. (Principal Investigator)
1/07/13 → 30/06/17
Project: Research

Cite this

Broderick, C. A., Rorison, J., Marko, I. P., Sweeney, S. J., & O’Reilly, E. P. (2016). GaAs-based dilute bismide semiconductor lasers: Theory vs. experiment. In 2016 16th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2016): Proceedings of a meeting held 11-15 July 2016, Sydney, Australia (pp. 209-210). (Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/NUSOD.2016.7546999

Broderick, Christopher A ; Rorison, Judy ; Marko, Igor P. et al. / GaAs-based dilute bismide semiconductor lasers : Theory vs. experiment. 2016 16th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2016): Proceedings of a meeting held 11-15 July 2016, Sydney, Australia. Institute of Electrical and Electronics Engineers (IEEE), 2016. pp. 209-210 (Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)).

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title = "GaAs-based dilute bismide semiconductor lasers: Theory vs. experiment",

abstract = "We present a theoretical analysis of the electronic and optical properties of near-infrared dilute bismide quantum well (QW) lasers grown on GaAs substrates. Our theoretical model is based upon a 12-band kp Hamiltonian which explicitly incorporates the strong Bi-induced modifications of the band structure in pseudomorphically strained GaBixAs1􀀀x alloys. We outline the impact of Bi on the gain characteristics of ideal GaBixAs1􀀀x/(Al)GaAs devices, compare the results of our theoretical calculations to experimental measurements of the spontaneous emission (SE) and optical gain – a first for this emerging material system – and demonstrate quantitative agreement between theory and experiment. Through our theoretical analysis we further demonstrate that this novel class of III-V semiconductor alloys has strong potential for the development of highly efficient GaAs-based semiconductor lasers which promise to deliver uncooled operation at 1.55 m.",

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Broderick, CA, Rorison, J, Marko, IP, Sweeney, SJ & O’Reilly, EP 2016, GaAs-based dilute bismide semiconductor lasers: Theory vs. experiment. in 2016 16th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2016): Proceedings of a meeting held 11-15 July 2016, Sydney, Australia. Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Institute of Electrical and Electronics Engineers (IEEE), pp. 209-210, Numerical Simulation of Optoelectronic Devices, Sydney, Australia, 11/07/16. https://doi.org/10.1109/NUSOD.2016.7546999

GaAs-based dilute bismide semiconductor lasers: Theory vs. experiment. / Broderick, Christopher A; Rorison, Judy; Marko, Igor P. et al.
2016 16th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2016): Proceedings of a meeting held 11-15 July 2016, Sydney, Australia. Institute of Electrical and Electronics Engineers (IEEE), 2016. p. 209-210 (Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)).

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - GaAs-based dilute bismide semiconductor lasers

T2 - Numerical Simulation of Optoelectronic Devices

AU - Broderick, Christopher A

AU - Rorison, Judy

AU - Marko, Igor P.

AU - Sweeney, Stephen J.

AU - O’Reilly, Eoin P.

PY - 2016/9

Y1 - 2016/9

N2 - We present a theoretical analysis of the electronic and optical properties of near-infrared dilute bismide quantum well (QW) lasers grown on GaAs substrates. Our theoretical model is based upon a 12-band kp Hamiltonian which explicitly incorporates the strong Bi-induced modifications of the band structure in pseudomorphically strained GaBixAs1􀀀x alloys. We outline the impact of Bi on the gain characteristics of ideal GaBixAs1􀀀x/(Al)GaAs devices, compare the results of our theoretical calculations to experimental measurements of the spontaneous emission (SE) and optical gain – a first for this emerging material system – and demonstrate quantitative agreement between theory and experiment. Through our theoretical analysis we further demonstrate that this novel class of III-V semiconductor alloys has strong potential for the development of highly efficient GaAs-based semiconductor lasers which promise to deliver uncooled operation at 1.55 m.

AB - We present a theoretical analysis of the electronic and optical properties of near-infrared dilute bismide quantum well (QW) lasers grown on GaAs substrates. Our theoretical model is based upon a 12-band kp Hamiltonian which explicitly incorporates the strong Bi-induced modifications of the band structure in pseudomorphically strained GaBixAs1􀀀x alloys. We outline the impact of Bi on the gain characteristics of ideal GaBixAs1􀀀x/(Al)GaAs devices, compare the results of our theoretical calculations to experimental measurements of the spontaneous emission (SE) and optical gain – a first for this emerging material system – and demonstrate quantitative agreement between theory and experiment. Through our theoretical analysis we further demonstrate that this novel class of III-V semiconductor alloys has strong potential for the development of highly efficient GaAs-based semiconductor lasers which promise to deliver uncooled operation at 1.55 m.

U2 - 10.1109/NUSOD.2016.7546999

DO - 10.1109/NUSOD.2016.7546999

M3 - Conference Contribution (Conference Proceeding)

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T3 - Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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BT - 2016 16th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2016)

PB - Institute of Electrical and Electronics Engineers (IEEE)

Y2 - 11 July 2016 through 15 July 2016

ER -

Broderick CA, Rorison J, Marko IP, Sweeney SJ, O’Reilly EP. GaAs-based dilute bismide semiconductor lasers: Theory vs. experiment. In 2016 16th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2016): Proceedings of a meeting held 11-15 July 2016, Sydney, Australia. Institute of Electrical and Electronics Engineers (IEEE). 2016. p. 209-210. (Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)). Epub 2016 Aug 18. doi: 10.1109/NUSOD.2016.7546999

GaAs-based dilute bismide semiconductor lasers: Theory vs. experiment

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Semiconductor III-V Quantum-Dot Solar Cells on Silicon Substrates

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