| Translated title of the contribution | Gain characteristics of InGaN/GaN quantum well diode laser |
|---|---|
| Original language | English |
| Title of host publication | Unknown |
| Pages | 224 - 224 |
| Number of pages | 1 |
| Publication status | Published - 1998 |
Bibliographical note
Conference Proceedings/Title of Journal: Proc. of Conf. on Lasers and Electro-Optics, Baltimore USAResearch Groups and Themes
- CDTR
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