Gain characteristics of InGaN/GaN quantum well diode lasers

YK Song, M Kuball, AV Nurmikko, GE Bulman, K Doverspike, ST Sheppard, TW Weeks, M Leonard, HS Kong, H Dieringer, J Edmond

Research output: Contribution to journalArticle (Academic Journal)

Original languageEnglish
Pages (from-to)1418 - 1420
JournalApplied Physics Letters
Volume72
Publication statusPublished - 1998

Structured keywords

  • CDTR

Cite this

Song, YK., Kuball, M., Nurmikko, AV., Bulman, GE., Doverspike, K., Sheppard, ST., Weeks, TW., Leonard, M., Kong, HS., Dieringer, H., & Edmond, J. (1998). Gain characteristics of InGaN/GaN quantum well diode lasers. Applied Physics Letters, 72, 1418 - 1420.