Gain characteristics of InGaN/GaN quantum well diode lasers

YK Song; M Kuball; AV Nurmikko; GE Bulman; K Doverspike; ST Sheppard; TW Weeks; M Leonard; HS Kong; H Dieringer; J Edmond

Gain characteristics of InGaN/GaN quantum well diode lasers

YK Song
, M Kuball
, AV Nurmikko
, GE Bulman
, K Doverspike
, ST Sheppard
, TW Weeks
, M Leonard
, HS Kong
, H Dieringer
, J Edmond

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

Translated title of the contribution	Gain characteristics of InGaN/GaN quantum well diode lasers
Original language	English
Pages (from-to)	1418 - 1420
Journal	Applied Physics Letters
Volume	72
Publication status	Published - 1998

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Cite this

@article{365699c4e13c43b48e96a14fb9614fde,

title = "Gain characteristics of InGaN/GaN quantum well diode lasers",

author = "YK Song and M Kuball and AV Nurmikko and GE Bulman and K Doverspike and ST Sheppard and TW Weeks and M Leonard and HS Kong and H Dieringer and J Edmond",

year = "1998",

language = "English",

volume = "72",

pages = "1418 -- 1420",

journal = "Applied Physics Letters",

issn = "1077-3118",

publisher = "American Institute of Physics (AIP)",

}

TY - JOUR

T1 - Gain characteristics of InGaN/GaN quantum well diode lasers

AU - Song, YK

AU - Kuball, M

AU - Nurmikko, AV

AU - Bulman, GE

AU - Doverspike, K

AU - Sheppard, ST

AU - Weeks, TW

AU - Leonard, M

AU - Kong, HS

AU - Dieringer, H

AU - Edmond, J

PY - 1998

Y1 - 1998

M3 - Article (Academic Journal)

SN - 1077-3118

VL - 72

SP - 1418

EP - 1420

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -