Abstract
The constraints on dilute-nitride Semiconductor Optical Amplifiers (SOAs) for multi-channel amplification have been evaluated. The SOA has been fabricated angling the facets of a GaInNAs/GaAs edge emitting laser using gas enhanced focused ion beam etching
Translated title of the contribution | GaInNAs/GaAs quantum-well semiconductor optical amplifiers for simultaneous multi-wavelength amplification |
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Original language | English |
Title of host publication | European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference (CLEO2007), Munich, Germany |
Publication status | Published - 17 Jun 2007 |