GaInNAs/GaAs quantum wells: Advantages for SOAs

JM Rorison, JM Pozo, HC Wong, YN Qiu, N Vogiatzis, D Alexandropoulos, K Konttinen, M Saarinen, T Jouhti, M Pessa

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

Abstract

GaInNAs/GaAs quantum wells are a relatively new material system for telecom/data com application. Generally it has been thought that the material offers an improved temperature performance and lattice matching to GaAs both significant advances. However studies of the material show that it has more parameters to control: in particular controlling the N distribution within the QW and the nature of the N states- single, pair states or cluster states allows tunability of the band gap, conduction band effective mass and quantum-dot-like localised states. These features offer a number of new device applications which will be discussed in this talk
Translated title of the contributionGaInNAs/GaAs quantum wells: Advantages for SOAs
Original languageEnglish
Title of host publicationInternational Conference on Optical Transparent Networks (ICTON), Nottingham, UK
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages150 - 150
Number of pages1
ISBN (Print)1424402352
DOIs
Publication statusPublished - 18 Jun 2006

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