GaInNAs/GaAs quantum wells: Advantages for SOAs

JM Rorison; JM Pozo; HC Wong; YN Qiu; N Vogiatzis; D Alexandropoulos; K Konttinen; M Saarinen; T Jouhti; M Pessa

doi:10.1109/ICTON.2006.248360

GaInNAs/GaAs quantum wells: Advantages for SOAs

JM Rorison, JM Pozo, HC Wong, YN Qiu, N Vogiatzis, D Alexandropoulos, K Konttinen, M Saarinen, T Jouhti, M Pessa

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

Abstract

GaInNAs/GaAs quantum wells are a relatively new material system for telecom/data com application. Generally it has been thought that the material offers an improved temperature performance and lattice matching to GaAs both significant advances. However studies of the material show that it has more parameters to control: in particular controlling the N distribution within the QW and the nature of the N states- single, pair states or cluster states allows tunability of the band gap, conduction band effective mass and quantum-dot-like localised states. These features offer a number of new device applications which will be discussed in this talk

Translated title of the contribution	GaInNAs/GaAs quantum wells: Advantages for SOAs
Original language	English
Title of host publication	International Conference on Optical Transparent Networks (ICTON), Nottingham, UK
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	150 - 150
Number of pages	1
ISBN (Print)	1424402352
DOIs	https://doi.org/10.1109/ICTON.2006.248360
Publication status	Published - 18 Jun 2006

Research Groups and Themes

Photonics and Quantum

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Rorison, JM., Pozo, JM., Wong, HC., Qiu, YN., Vogiatzis, N., Alexandropoulos, D., Konttinen, K., Saarinen, M., Jouhti, T., & Pessa, M. (2006). GaInNAs/GaAs quantum wells: Advantages for SOAs. In International Conference on Optical Transparent Networks (ICTON), Nottingham, UK (pp. 150 - 150). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/ICTON.2006.248360

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title = "GaInNAs/GaAs quantum wells: Advantages for SOAs",

abstract = "GaInNAs/GaAs quantum wells are a relatively new material system for telecom/data com application. Generally it has been thought that the material offers an improved temperature performance and lattice matching to GaAs both significant advances. However studies of the material show that it has more parameters to control: in particular controlling the N distribution within the QW and the nature of the N states- single, pair states or cluster states allows tunability of the band gap, conduction band effective mass and quantum-dot-like localised states. These features offer a number of new device applications which will be discussed in this talk",

author = "JM Rorison and JM Pozo and HC Wong and YN Qiu and N Vogiatzis and D Alexandropoulos and K Konttinen and M Saarinen and T Jouhti and M Pessa",

year = "2006",

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doi = "10.1109/ICTON.2006.248360",

language = "English",

isbn = "1424402352",

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Rorison, JM, Pozo, JM, Wong, HC, Qiu, YN, Vogiatzis, N, Alexandropoulos, D, Konttinen, K, Saarinen, M, Jouhti, T & Pessa, M 2006, GaInNAs/GaAs quantum wells: Advantages for SOAs. in International Conference on Optical Transparent Networks (ICTON), Nottingham, UK. Institute of Electrical and Electronics Engineers (IEEE), pp. 150 - 150. https://doi.org/10.1109/ICTON.2006.248360

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T1 - GaInNAs/GaAs quantum wells: Advantages for SOAs

AU - Rorison, JM

AU - Pozo, JM

AU - Wong, HC

AU - Qiu, YN

AU - Vogiatzis, N

AU - Alexandropoulos, D

AU - Konttinen, K

AU - Saarinen, M

AU - Jouhti, T

AU - Pessa, M

PY - 2006/6/18

Y1 - 2006/6/18

N2 - GaInNAs/GaAs quantum wells are a relatively new material system for telecom/data com application. Generally it has been thought that the material offers an improved temperature performance and lattice matching to GaAs both significant advances. However studies of the material show that it has more parameters to control: in particular controlling the N distribution within the QW and the nature of the N states- single, pair states or cluster states allows tunability of the band gap, conduction band effective mass and quantum-dot-like localised states. These features offer a number of new device applications which will be discussed in this talk

AB - GaInNAs/GaAs quantum wells are a relatively new material system for telecom/data com application. Generally it has been thought that the material offers an improved temperature performance and lattice matching to GaAs both significant advances. However studies of the material show that it has more parameters to control: in particular controlling the N distribution within the QW and the nature of the N states- single, pair states or cluster states allows tunability of the band gap, conduction band effective mass and quantum-dot-like localised states. These features offer a number of new device applications which will be discussed in this talk

U2 - 10.1109/ICTON.2006.248360

DO - 10.1109/ICTON.2006.248360

M3 - Conference Contribution (Conference Proceeding)

SN - 1424402352

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EP - 150

BT - International Conference on Optical Transparent Networks (ICTON), Nottingham, UK

PB - Institute of Electrical and Electronics Engineers (IEEE)

ER -

GaInNAs/GaAs quantum wells: Advantages for SOAs

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