Gallium nitride phononic integrated circuits platform for GHz frequency acoustic wave devices

Mahmut Bicer; Stefano Valle; Jacob G Brown; Martin H H Kuball; Krishna Coimbatore Balram

doi:10.1063/5.0082467

Gallium nitride phononic integrated circuits platform for GHz frequency acoustic wave devices

Mahmut Bicer, Stefano Valle, Jacob G Brown, Martin H H Kuball, Krishna Coimbatore Balram

Research output: Contribution to journal › Article (Academic Journal) › peer-review

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Abstract

Strong transverse confinement of high-frequency sound and low-loss routing in on-chip waveguides will bring new degrees of freedom to manipulate GHz frequency acoustic waves, analogous to the change brought forth by silicon integrated photonics to the routing and manipulation of light on a chip. Here, we demonstrate that high frequency (>3 GHz) sound can be efficiently guided in μm-scale gallium nitride (GaN) waveguides and ring resonators by exploiting the strong velocity contrast available in the GaN on silicon carbide (SiC) platform. Given the established use of GaN devices in RF amplifiers, our work opens up the possibility of building RF devices with tight integration between the active and passive components on the same die.

Original language	English
Article number	243502
Number of pages	6
Journal	Applied Physics Letters
Volume	120
Issue number	24
DOIs	https://doi.org/10.1063/5.0082467
Publication status	Published - 15 Jun 2022

Bibliographical note

Funding Information:
We would like to thank the Engineering and Physical Sciences Research Council (GLIMMER, No. EP/V005286/1; QuPIC, No. EP/ N015126/1) and European Research Council (ERC-StG, SBS3-5, No. 758843) for funding support. J.B. would like to thank the Engineering and Physical Sciences Research Council for a DTP award (No. EP/T517872/1). The authors would like to thank Manikant Singh, Martin Cryan, Bruce Drinkwater, and John Haine for useful discussions and suggestions.

Publisher Copyright:
© 2022 Author(s).

Structured keywords

Bristol Quantum Information Institute
Photonics and Quantum

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Final published version, 4.37 MBLicence: CC BY

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Gallium Nitride on Silicon Carbide Platform for Integrated Acoustic Devices: Toward Monolithic Integration of Active/Passive RF Components
Author: Bicer, M., 23 Jan 2024
Supervisor: Coimbatore Balram, K. (Supervisor)
Student thesis: Doctoral Thesis › Doctor of Philosophy (PhD)

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title = "Gallium nitride phononic integrated circuits platform for GHz frequency acoustic wave devices",

abstract = "Strong transverse confinement of high-frequency sound and low-loss routing in on-chip waveguides will bring new degrees of freedom to manipulate GHz frequency acoustic waves, analogous to the change brought forth by silicon integrated photonics to the routing and manipulation of light on a chip. Here, we demonstrate that high frequency (>3 GHz) sound can be efficiently guided in μm-scale gallium nitride (GaN) waveguides and ring resonators by exploiting the strong velocity contrast available in the GaN on silicon carbide (SiC) platform. Given the established use of GaN devices in RF amplifiers, our work opens up the possibility of building RF devices with tight integration between the active and passive components on the same die.",

author = "Mahmut Bicer and Stefano Valle and Brown, {Jacob G} and Kuball, {Martin H H} and {Coimbatore Balram}, Krishna",

note = "Funding Information: We would like to thank the Engineering and Physical Sciences Research Council (GLIMMER, No. EP/V005286/1; QuPIC, No. EP/ N015126/1) and European Research Council (ERC-StG, SBS3-5, No. 758843) for funding support. J.B. would like to thank the Engineering and Physical Sciences Research Council for a DTP award (No. EP/T517872/1). The authors would like to thank Manikant Singh, Martin Cryan, Bruce Drinkwater, and John Haine for useful discussions and suggestions. Publisher Copyright: {\textcopyright} 2022 Author(s).",

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language = "English",

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AU - Bicer, Mahmut

AU - Valle, Stefano

AU - Brown, Jacob G

AU - Kuball, Martin H H

AU - Coimbatore Balram, Krishna

N1 - Funding Information: We would like to thank the Engineering and Physical Sciences Research Council (GLIMMER, No. EP/V005286/1; QuPIC, No. EP/ N015126/1) and European Research Council (ERC-StG, SBS3-5, No. 758843) for funding support. J.B. would like to thank the Engineering and Physical Sciences Research Council for a DTP award (No. EP/T517872/1). The authors would like to thank Manikant Singh, Martin Cryan, Bruce Drinkwater, and John Haine for useful discussions and suggestions. Publisher Copyright: © 2022 Author(s).

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Y1 - 2022/6/15

N2 - Strong transverse confinement of high-frequency sound and low-loss routing in on-chip waveguides will bring new degrees of freedom to manipulate GHz frequency acoustic waves, analogous to the change brought forth by silicon integrated photonics to the routing and manipulation of light on a chip. Here, we demonstrate that high frequency (>3 GHz) sound can be efficiently guided in μm-scale gallium nitride (GaN) waveguides and ring resonators by exploiting the strong velocity contrast available in the GaN on silicon carbide (SiC) platform. Given the established use of GaN devices in RF amplifiers, our work opens up the possibility of building RF devices with tight integration between the active and passive components on the same die.

AB - Strong transverse confinement of high-frequency sound and low-loss routing in on-chip waveguides will bring new degrees of freedom to manipulate GHz frequency acoustic waves, analogous to the change brought forth by silicon integrated photonics to the routing and manipulation of light on a chip. Here, we demonstrate that high frequency (>3 GHz) sound can be efficiently guided in μm-scale gallium nitride (GaN) waveguides and ring resonators by exploiting the strong velocity contrast available in the GaN on silicon carbide (SiC) platform. Given the established use of GaN devices in RF amplifiers, our work opens up the possibility of building RF devices with tight integration between the active and passive components on the same die.

U2 - 10.1063/5.0082467

DO - 10.1063/5.0082467

M3 - Article (Academic Journal)

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 243502

ER -

Gallium nitride phononic integrated circuits platform for GHz frequency acoustic wave devices

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Gallium Nitride on Silicon Carbide Platform for Integrated Acoustic Devices: Toward Monolithic Integration of Active/Passive RF Components

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