GaN Buffer Design: Electrical Characterization and Prediction of the Effect of Deep Level Centers in GaN/AIGaN HEMTs

Marco Silvestri, Michael J Uren, D Marcon, Martin Kuball

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

2 Citations (Scopus)
145 Downloads (Pure)

Abstract

GaN buffer deep level centers are studied coupling measurements and device physics simulations. The impact of Fe- and C-doped samples on low frequency device transconductance and noise is presented. The Fe-level found at 0.7 eV below the GaN conduction band results in low frequency generation-recombination noise and transconductance dispersion. The agreement with the model shows that the buffer can now be reliably simulated and used to investigate the impact of other deep level traps, such as carbon, that cannot be easily measured due to their deep position in the GaN bandgap.
Original languageEnglish
Title of host publicationProceedings of 2013 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH)
Subtitle of host publicationMay 13th - 16th 2013, New Orleans, Louisiana, USA
PublisherCS Mantech
Pages195-197
Number of pages3
Publication statusPublished - 2013
Event2013 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH) - New Orleans, Louisiana, United States
Duration: 13 May 201316 May 2013

Conference

Conference2013 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH)
CountryUnited States
CityNew Orleans, Louisiana
Period13/05/1316/05/13

Structured keywords

  • CDTR

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