GaN Buffer Design: Electrical Characterization and Prediction of the Effect of Deep Level Centers in GaN/AIGaN HEMTs

Marco Silvestri; Michael J Uren; D Marcon; Martin Kuball

GaN Buffer Design: Electrical Characterization and Prediction of the Effect of Deep Level Centers in GaN/AIGaN HEMTs

Marco Silvestri, Michael J Uren, D Marcon, Martin Kuball

School of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

2 Citations (Scopus)

145 Downloads (Pure)

Abstract

GaN buffer deep level centers are studied coupling measurements and device physics simulations. The impact of Fe- and C-doped samples on low frequency device transconductance and noise is presented. The Fe-level found at 0.7 eV below the GaN conduction band results in low frequency generation-recombination noise and transconductance dispersion. The agreement with the model shows that the buffer can now be reliably simulated and used to investigate the impact of other deep level traps, such as carbon, that cannot be easily measured due to their deep position in the GaN bandgap.

Original language	English
Title of host publication	Proceedings of 2013 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH)
Subtitle of host publication	May 13th - 16th 2013, New Orleans, Louisiana, USA
Publisher	CS Mantech
Pages	195-197
Number of pages	3
Publication status	Published - 2013
Event	2013 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH) - New Orleans, Louisiana, United States Duration: 13 May 2013 → 16 May 2013

Conference

Conference	2013 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH)
Country/Territory	United States
City	New Orleans, Louisiana
Period	13/05/13 → 16/05/13

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Novel Sub-Threshold Methodologies for GaN Electronic Devices: A Study of Device Reliability and Failure Mechanisms
Kuball, M. H. H.
1/04/11 → 1/11/15
Project: Research

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Silvestri, M., Uren, M. J., Marcon, D., & Kuball, M. (2013). GaN Buffer Design: Electrical Characterization and Prediction of the Effect of Deep Level Centers in GaN/AIGaN HEMTs. In Proceedings of 2013 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH): May 13th - 16th 2013, New Orleans, Louisiana, USA (pp. 195-197). CS Mantech. http://www.csmantech.org/Digests/2013/papers/057.pdf

Silvestri, Marco ; Uren, Michael J ; Marcon, D ; Kuball, Martin. / GaN Buffer Design : Electrical Characterization and Prediction of the Effect of Deep Level Centers in GaN/AIGaN HEMTs. Proceedings of 2013 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH): May 13th - 16th 2013, New Orleans, Louisiana, USA. CS Mantech, 2013. pp. 195-197

@inproceedings{adace58cefad46ee87579ac3d4b16276,

title = "GaN Buffer Design: Electrical Characterization and Prediction of the Effect of Deep Level Centers in GaN/AIGaN HEMTs",

abstract = "GaN buffer deep level centers are studied coupling measurements and device physics simulations. The impact of Fe- and C-doped samples on low frequency device transconductance and noise is presented. The Fe-level found at 0.7 eV below the GaN conduction band results in low frequency generation-recombination noise and transconductance dispersion. The agreement with the model shows that the buffer can now be reliably simulated and used to investigate the impact of other deep level traps, such as carbon, that cannot be easily measured due to their deep position in the GaN bandgap.",

author = "Marco Silvestri and Uren, {Michael J} and D Marcon and Martin Kuball",

year = "2013",

language = "English",

pages = "195--197",

booktitle = "Proceedings of 2013 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH)",

publisher = "CS Mantech",

note = "2013 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH) ; Conference date: 13-05-2013 Through 16-05-2013",

}

Silvestri, M, Uren, MJ, Marcon, D & Kuball, M 2013, GaN Buffer Design: Electrical Characterization and Prediction of the Effect of Deep Level Centers in GaN/AIGaN HEMTs. in Proceedings of 2013 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH): May 13th - 16th 2013, New Orleans, Louisiana, USA. CS Mantech, pp. 195-197, 2013 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH), New Orleans, Louisiana, United States, 13/05/13. <http://www.csmantech.org/Digests/2013/papers/057.pdf>

GaN Buffer Design : Electrical Characterization and Prediction of the Effect of Deep Level Centers in GaN/AIGaN HEMTs. / Silvestri, Marco; Uren, Michael J; Marcon, D; Kuball, Martin.

Proceedings of 2013 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH): May 13th - 16th 2013, New Orleans, Louisiana, USA. CS Mantech, 2013. p. 195-197.

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - GaN Buffer Design

T2 - 2013 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH)

AU - Silvestri, Marco

AU - Uren, Michael J

AU - Marcon, D

AU - Kuball, Martin

PY - 2013

Y1 - 2013

N2 - GaN buffer deep level centers are studied coupling measurements and device physics simulations. The impact of Fe- and C-doped samples on low frequency device transconductance and noise is presented. The Fe-level found at 0.7 eV below the GaN conduction band results in low frequency generation-recombination noise and transconductance dispersion. The agreement with the model shows that the buffer can now be reliably simulated and used to investigate the impact of other deep level traps, such as carbon, that cannot be easily measured due to their deep position in the GaN bandgap.

AB - GaN buffer deep level centers are studied coupling measurements and device physics simulations. The impact of Fe- and C-doped samples on low frequency device transconductance and noise is presented. The Fe-level found at 0.7 eV below the GaN conduction band results in low frequency generation-recombination noise and transconductance dispersion. The agreement with the model shows that the buffer can now be reliably simulated and used to investigate the impact of other deep level traps, such as carbon, that cannot be easily measured due to their deep position in the GaN bandgap.

M3 - Conference Contribution (Conference Proceeding)

SP - 195

EP - 197

BT - Proceedings of 2013 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH)

PB - CS Mantech

Y2 - 13 May 2013 through 16 May 2013

ER -

GaN Buffer Design: Electrical Characterization and Prediction of the Effect of Deep Level Centers in GaN/AIGaN HEMTs

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Novel Sub-Threshold Methodologies for GaN Electronic Devices: A Study of Device Reliability and Failure Mechanisms

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