Projects per year
GaN buffer deep level centers are studied coupling measurements and device physics simulations. The impact of Fe- and C-doped samples on low frequency device transconductance and noise is presented. The Fe-level found at 0.7 eV below the GaN conduction band results in low frequency generation-recombination noise and transconductance dispersion. The agreement with the model shows that the buffer can now be reliably simulated and used to investigate the impact of other deep level traps, such as carbon, that cannot be easily measured due to their deep position in the GaN bandgap.
|Title of host publication||Proceedings of 2013 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH)|
|Subtitle of host publication||May 13th - 16th 2013, New Orleans, Louisiana, USA|
|Number of pages||3|
|Publication status||Published - 2013|
|Event||2013 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH) - New Orleans, Louisiana, United States|
Duration: 13 May 2013 → 16 May 2013
|Conference||2013 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH)|
|City||New Orleans, Louisiana|
|Period||13/05/13 → 16/05/13|
FingerprintDive into the research topics of 'GaN Buffer Design: Electrical Characterization and Prediction of the Effect of Deep Level Centers in GaN/AIGaN HEMTs'. Together they form a unique fingerprint.
- 1 Finished
Novel Sub-Threshold Methodologies for GaN Electronic Devices: A Study of Device Reliability and Failure Mechanisms
1/04/11 → 1/11/15