GaN nanoindentation: A micro-Raman spectroscopy study of local strain fields

P Puech, F Demangeot, J Frandon, C Pinquier, M Kuball, V Domnich, Y Gogotsi

Research output: Contribution to journalArticle (Academic Journal)peer-review

61 Citations (Scopus)

Abstract

We have investigated strain fields around GaN nanoindentations. Stress relaxation around the edges of the nanoindentation was evident in atomic force microscopy images. More detailed information on the strain fields was obtained from Raman scattering, which has been used to analyze the shape of the strain field around the indentation. We find that the Berkovich tip giving a triangular imprint on the sample generates a strain field, which represents a hexagonal pattern. Negative values of the strain indicate that the residual stress is compressive. Strain is larger in the center of the indentation than outside. Analysis of the ratio of the frequency shift of the E-2 and A(1)(LO) modes suggests that the residual strains are close to biaxial state outside the indentation contact zone, and mostly hydrostatic within the indentation center.
Translated title of the contributionGaN nanoindentation: A micro-Raman spectroscopy study of local strain fields
Original languageEnglish
Pages (from-to)2853 - 2856
Number of pages4
JournalJournal of Applied Physics
Volume96 (5)
Publication statusPublished - 2004

Bibliographical note

Publisher: American Institute of Physics

Structured keywords

  • CDTR

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