GaN-on-Diamond Electronic Device Reliability: Mechanical and Thermo-Mechanical Integrity

Dong Liu, Huarui Sun, James Pomeroy, Daniel Francis, Firooz Faili, Daniel J. Twitchen, Martin Kuball

Research output: Contribution to journalArticle (Academic Journal)peer-review

14 Citations (Scopus)
488 Downloads (Pure)

Abstract

The mechanical and thermo-mechanical integrity of GaN-on-diamond wafers used for ultra-high power microwave electronic devices was studied using a micro-pillar based in situ mechanical testing approach combined with an optical investigation of the stress and heat transfer across interfaces. We find the GaN/diamond interface to be thermo-mechanically stable, illustrating the potential for this material for reliable GaN electronic devices.
Original languageEnglish
Article number251902
Number of pages4
JournalApplied Physics Letters
Volume107
Issue number25
DOIs
Publication statusPublished - 21 Dec 2015

Structured keywords

  • CDTR

Keywords

  • III-V semiconductors
  • Diamond
  • Elemental seminconductors
  • Electronic devices
  • Interface structure

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