GaN-on-Diamond Electronic Device Reliability: Mechanical and Thermo-Mechanical Integrity

Dong Liu; Huarui Sun; James Pomeroy; Daniel Francis; Firooz Faili; Daniel J. Twitchen; Martin Kuball

doi:10.1063/1.4938002

GaN-on-Diamond Electronic Device Reliability: Mechanical and Thermo-Mechanical Integrity

Dong Liu, Huarui Sun, James Pomeroy, Daniel Francis, Firooz Faili, Daniel J. Twitchen, Martin Kuball

Research output: Contribution to journal › Article (Academic Journal) › peer-review

30 Citations (Scopus)

777 Downloads (Pure)

Abstract

The mechanical and thermo-mechanical integrity of GaN-on-diamond wafers used for ultra-high power microwave electronic devices was studied using a micro-pillar based in situ mechanical testing approach combined with an optical investigation of the stress and heat transfer across interfaces. We find the GaN/diamond interface to be thermo-mechanically stable, illustrating the potential for this material for reliable GaN electronic devices.

Original language	English
Article number	251902
Number of pages	4
Journal	Applied Physics Letters
Volume	107
Issue number	25
DOIs	https://doi.org/10.1063/1.4938002
Publication status	Published - 21 Dec 2015

Research Groups and Themes

CDTR

Keywords

III-V semiconductors
Diamond
Elemental seminconductors
Electronic devices
Interface structure

Access to Document

10.1063/1.4938002

APL_Kuball_2015_revision_clean_1
This is the author accepted manuscript (AAM). The final published version (version of record) is available online via American Institute of Physics at http://dx.doi.org/10.1063/1.4938002. Please refer to any applicable terms of use of the publisher.
Accepted author manuscript, 246 KBLicence: Unspecified
1.4938002
This is the final published version of the article (version of record). It first appeared online via American Institute of Physics at http://dx.doi.org/10.1063/1.4938002. Please refer to any applicable terms of use of the publisher.
Final published version, 1,000 KB

Handle.net

Persistent link

Professor Martin H H Kuball
- Martin.Kuballbristol.acuk
- School of Physics - Professor of Physics (Royal Society Wolfson Research Merit Award Holder)
Person: Academic

Cite this

@article{b362d83a223545f4bd65ae6f84354238,

title = "GaN-on-Diamond Electronic Device Reliability: Mechanical and Thermo-Mechanical Integrity",

abstract = "The mechanical and thermo-mechanical integrity of GaN-on-diamond wafers used for ultra-high power microwave electronic devices was studied using a micro-pillar based in situ mechanical testing approach combined with an optical investigation of the stress and heat transfer across interfaces. We find the GaN/diamond interface to be thermo-mechanically stable, illustrating the potential for this material for reliable GaN electronic devices.",

keywords = "III-V semiconductors, Diamond, Elemental seminconductors, Electronic devices, Interface structure",

author = "Dong Liu and Huarui Sun and James Pomeroy and Daniel Francis and Firooz Faili and Twitchen, \{Daniel J.\} and Martin Kuball",

year = "2015",

month = dec,

day = "21",

doi = "10.1063/1.4938002",

language = "English",

volume = "107",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics (AIP)",

number = "25",

}

TY - JOUR

T1 - GaN-on-Diamond Electronic Device Reliability

T2 - Mechanical and Thermo-Mechanical Integrity

AU - Liu, Dong

AU - Sun, Huarui

AU - Pomeroy, James

AU - Francis, Daniel

AU - Faili, Firooz

AU - Twitchen, Daniel J.

AU - Kuball, Martin

PY - 2015/12/21

Y1 - 2015/12/21

N2 - The mechanical and thermo-mechanical integrity of GaN-on-diamond wafers used for ultra-high power microwave electronic devices was studied using a micro-pillar based in situ mechanical testing approach combined with an optical investigation of the stress and heat transfer across interfaces. We find the GaN/diamond interface to be thermo-mechanically stable, illustrating the potential for this material for reliable GaN electronic devices.

AB - The mechanical and thermo-mechanical integrity of GaN-on-diamond wafers used for ultra-high power microwave electronic devices was studied using a micro-pillar based in situ mechanical testing approach combined with an optical investigation of the stress and heat transfer across interfaces. We find the GaN/diamond interface to be thermo-mechanically stable, illustrating the potential for this material for reliable GaN electronic devices.

KW - III-V semiconductors

KW - Diamond

KW - Elemental seminconductors

KW - Electronic devices

KW - Interface structure

U2 - 10.1063/1.4938002

DO - 10.1063/1.4938002

M3 - Article (Academic Journal)

SN - 0003-6951

VL - 107

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

M1 - 251902

ER -

GaN-on-Diamond Electronic Device Reliability: Mechanical and Thermo-Mechanical Integrity

Abstract

Research Groups and Themes

Keywords

Access to Document

Handle.net

Fingerprint

Profiles

Professor Martin H H Kuball

Cite this