GaN-on-diamond: Robust mechanical and thermal properties

Huarui Sun; Dong Liu; James W. Pomeroy; Daniel Francis; Firooz Faili; Daniel J. Twitchen; Martin Kuball

GaN-on-diamond: Robust mechanical and thermal properties

Huarui Sun, Dong Liu, James W. Pomeroy, Daniel Francis, Firooz Faili, Daniel J. Twitchen, Martin Kuball

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

6 Citations (Scopus)

170 Downloads (Pure)

Abstract

Achieving robust mechanical and thermal properties in GaN-on-diamond is critically important for reliable next-generation high-power electronics based on this material system. The work described here demonstrates that excellent stress management and interfacial strength has been achieved, as well as homogeneous interfacial thermal properties across the wafer for the latest GaN-on-diamond technology.

Original language	English
Title of host publication	CS MANTECH 2016
Subtitle of host publication	International Conference on Compound Semiconductor Manufacturing Technology
Publisher	CS Mantech
Pages	201-203
Number of pages	3
Publication status	Published - 27 May 2016
Event	31st Annual International Conference on Compound Semiconductor Manufacturing Technology, CS ManTech 2016 - Miami, United States Duration: 16 May 2016 → 19 May 2016

Conference

Conference	31st Annual International Conference on Compound Semiconductor Manufacturing Technology, CS ManTech 2016
Country/Territory	United States
City	Miami
Period	16/05/16 → 19/05/16

Research Groups and Themes

CDTR

Keywords

GaN-on-diamond
Interfacial strength
Reliability
Stress
Thermal boundary resistance
Wafer mapping

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Full-text PDF (accepted author manuscript)
This is the author accepted manuscript (AAM). The final published version (version of record) is available online via CS Mantech at http://csmantech2016.conferencespot.org/62266gmi-1.3079367/t011-1.3079858/f011-1.3079859/a045-1.3079860/an045-1.3092031. Please refer to any applicable terms of use of the publisher.
Accepted author manuscript, 83.3 KB

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@inproceedings{0343c8a25aed4c7995b9872d590b56f8,

title = "GaN-on-diamond: Robust mechanical and thermal properties",

abstract = "Achieving robust mechanical and thermal properties in GaN-on-diamond is critically important for reliable next-generation high-power electronics based on this material system. The work described here demonstrates that excellent stress management and interfacial strength has been achieved, as well as homogeneous interfacial thermal properties across the wafer for the latest GaN-on-diamond technology.",

keywords = "GaN-on-diamond, Interfacial strength, Reliability, Stress, Thermal boundary resistance, Wafer mapping",

author = "Huarui Sun and Dong Liu and Pomeroy, \{James W.\} and Daniel Francis and Firooz Faili and Twitchen, \{Daniel J.\} and Martin Kuball",

year = "2016",

month = may,

day = "27",

language = "English",

pages = "201--203",

booktitle = "CS MANTECH 2016",

publisher = "CS Mantech",

note = "31st Annual International Conference on Compound Semiconductor Manufacturing Technology, CS ManTech 2016 ; Conference date: 16-05-2016 Through 19-05-2016",

}

Sun, H, Liu, D, Pomeroy, JW, Francis, D, Faili, F, Twitchen, DJ & Kuball, M 2016, GaN-on-diamond: Robust mechanical and thermal properties. in CS MANTECH 2016: International Conference on Compound Semiconductor Manufacturing Technology. CS Mantech, pp. 201-203, 31st Annual International Conference on Compound Semiconductor Manufacturing Technology, CS ManTech 2016, Miami, United States, 16/05/16.

TY - GEN

T1 - GaN-on-diamond

T2 - 31st Annual International Conference on Compound Semiconductor Manufacturing Technology, CS ManTech 2016

AU - Sun, Huarui

AU - Liu, Dong

AU - Pomeroy, James W.

AU - Francis, Daniel

AU - Faili, Firooz

AU - Twitchen, Daniel J.

AU - Kuball, Martin

PY - 2016/5/27

Y1 - 2016/5/27

N2 - Achieving robust mechanical and thermal properties in GaN-on-diamond is critically important for reliable next-generation high-power electronics based on this material system. The work described here demonstrates that excellent stress management and interfacial strength has been achieved, as well as homogeneous interfacial thermal properties across the wafer for the latest GaN-on-diamond technology.

AB - Achieving robust mechanical and thermal properties in GaN-on-diamond is critically important for reliable next-generation high-power electronics based on this material system. The work described here demonstrates that excellent stress management and interfacial strength has been achieved, as well as homogeneous interfacial thermal properties across the wafer for the latest GaN-on-diamond technology.

KW - GaN-on-diamond

KW - Interfacial strength

KW - Reliability

KW - Stress

KW - Thermal boundary resistance

KW - Wafer mapping

UR - https://www.scopus.com/pages/publications/84978914850

M3 - Conference Contribution (Conference Proceeding)

AN - SCOPUS:84978914850

SP - 201

EP - 203

BT - CS MANTECH 2016

PB - CS Mantech

Y2 - 16 May 2016 through 19 May 2016

ER -

GaN-on-diamond: Robust mechanical and thermal properties

Abstract

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Research Groups and Themes

Keywords

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