GaN-on-diamond technology platform: Bonding-free membrane manufacturing process

Matthew D Smith; Daniel E Field; Chao Yuan; James W Pomeroy; Michael J Uren; Martin H H Kuball; et al.

doi:10.1063/1.5129229

GaN-on-diamond technology platform: Bonding-free membrane manufacturing process

Matthew D Smith, Daniel E Field, Chao Yuan, James W Pomeroy, Michael J Uren, Martin H H Kuball, et al.

Research output: Contribution to journal › Article (Academic Journal) › peer-review

15 Citations (Scopus)

143 Downloads (Pure)

Abstract

GaN-on-diamond samples were demonstrated using a membrane-based technology. This was achieved by selective area Si substrate removal of areas up to 1 cm × 1 cm from a GaN-on-Si wafer, followed by direct growth of polycrystalline diamond using microwave plasma chemical vapour deposition on etch exposed N-polar AlN epitaxial nucleation layers. Atomic force microscopy and transmission electron microscopy were used to confirm the formation of high quality, void-free AlN/diamond interfaces. The bond between the III-nitride layers and diamond was validated by strain measurements of the GaN buffer layer. Demonstration of this technology platform is an important step forward for the creating of next generation high power electronic devices.

Original language	English
Article number	035306
Number of pages	6
Journal	AIP Advances
Volume	10
Issue number	3
DOIs	https://doi.org/10.1063/1.5129229
Publication status	Published - 3 Mar 2020

Structured keywords

CDTR

Access to Document

10.1063/1.5129229

Full-text PDF (final published version)
This is the final published version of the article (version of record). It first appeared online via AIP Publishing at https://aip.scitation.org/doi/pdf/10.1063/1.5129229?download=true . Please refer to any applicable terms of use of the publisher.
Final published version, 2.04 MBLicence: CC BY

Handle.net

Persistent link

Embargoed Document

Full-text PDF (author’s accepted manuscript)
Accepted author manuscript, 2.01 MB
Request copy

Cite this

@article{dd4886d01f814e418f5da7050588d6bb,

title = "GaN-on-diamond technology platform: Bonding-free membrane manufacturing process",

abstract = "GaN-on-diamond samples were demonstrated using a membrane-based technology. This was achieved by selective area Si substrate removal of areas up to 1 cm × 1 cm from a GaN-on-Si wafer, followed by direct growth of polycrystalline diamond using microwave plasma chemical vapour deposition on etch exposed N-polar AlN epitaxial nucleation layers. Atomic force microscopy and transmission electron microscopy were used to confirm the formation of high quality, void-free AlN/diamond interfaces. The bond between the III-nitride layers and diamond was validated by strain measurements of the GaN buffer layer. Demonstration of this technology platform is an important step forward for the creating of next generation high power electronic devices.",

author = "Smith, {Matthew D} and Field, {Daniel E} and Chao Yuan and Pomeroy, {James W} and Uren, {Michael J} and Kuball, {Martin H H} and et al.",

year = "2020",

month = mar,

day = "3",

doi = "10.1063/1.5129229",

language = "English",

volume = "10",

journal = "AIP Advances",

issn = "2158-3226",

publisher = "American Institute of Physics (AIP)",

number = "3",

}

TY - JOUR

T1 - GaN-on-diamond technology platform

T2 - Bonding-free membrane manufacturing process

AU - Smith, Matthew D

AU - Field, Daniel E

AU - Yuan, Chao

AU - Pomeroy, James W

AU - Uren, Michael J

AU - Kuball, Martin H H

AU - al., et

PY - 2020/3/3

Y1 - 2020/3/3

N2 - GaN-on-diamond samples were demonstrated using a membrane-based technology. This was achieved by selective area Si substrate removal of areas up to 1 cm × 1 cm from a GaN-on-Si wafer, followed by direct growth of polycrystalline diamond using microwave plasma chemical vapour deposition on etch exposed N-polar AlN epitaxial nucleation layers. Atomic force microscopy and transmission electron microscopy were used to confirm the formation of high quality, void-free AlN/diamond interfaces. The bond between the III-nitride layers and diamond was validated by strain measurements of the GaN buffer layer. Demonstration of this technology platform is an important step forward for the creating of next generation high power electronic devices.

AB - GaN-on-diamond samples were demonstrated using a membrane-based technology. This was achieved by selective area Si substrate removal of areas up to 1 cm × 1 cm from a GaN-on-Si wafer, followed by direct growth of polycrystalline diamond using microwave plasma chemical vapour deposition on etch exposed N-polar AlN epitaxial nucleation layers. Atomic force microscopy and transmission electron microscopy were used to confirm the formation of high quality, void-free AlN/diamond interfaces. The bond between the III-nitride layers and diamond was validated by strain measurements of the GaN buffer layer. Demonstration of this technology platform is an important step forward for the creating of next generation high power electronic devices.

U2 - 10.1063/1.5129229

DO - 10.1063/1.5129229

M3 - Article (Academic Journal)

SN - 2158-3226

VL - 10

JO - AIP Advances

JF - AIP Advances

IS - 3

M1 - 035306

ER -

GaN-on-diamond technology platform: Bonding-free membrane manufacturing process

Abstract

Structured keywords

Access to Document

Handle.net

Embargoed Document

Fingerprint

Cite this