GaN transistor reliability and instabilities

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

10 Citations (Scopus)

Abstract

GaN based transistors are vulnerable to long time period instabilities as a result of the wide bandgap. In this paper we review the effect of the bulk GaN dopants, which are added to ensure a highly resistive buffer, on the current-collapse which occurs on switching from the off-state to the on-state. The iron doping frequently used in RF devices leads to a trap level in the upper half of the gap which generates a small, reproducible, and straightforwardly modelled current-collapse. On the other hand the carbon doping used in many power devices results in current-collapse which can be large but is strongly impacted by the presence of leaky threading dislocations. A powerful technique to characterise the buffer and extract the vertical leakage in the different layers within a GaN-n-Si power HEMT based on ramping the substrate bias is introduced.

Original languageEnglish
Title of host publicationConference Proceedings - 10th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2014
EditorsJuraj Breza, Daniel Donoval, Erik Vavrinsky
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages137-143
Number of pages7
ISBN (Electronic)9781479954742
DOIs
Publication statusPublished - 1 Jan 2014
Event10th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2014 - Smolenice, Slovakia
Duration: 20 Oct 201422 Oct 2014

Conference

Conference10th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2014
CountrySlovakia
CitySmolenice
Period20/10/1422/10/14

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