Ga2O3 – diamond for next generation power electronics

Abhishek Mishra; Zeina Abdallah; Hyun-Seop Kim; James W Pomeroy; Michael J Uren; Martin H H Kuball

doi:10.1109/EDTM53872.2022.9798115

Ga₂O₃ – diamond for next generation power electronics

Abhishek Mishra
, Zeina Abdallah
, Hyun-Seop Kim
, James W Pomeroy
, Michael J Uren
, Martin H H Kuball^*

^*Corresponding author for this work

School of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

2 Citations (Scopus)

Abstract

Ga₂O₃, with its ultra-wide bandgap and melt-grown substrates, offers the potential for low-cost >1 kV electronics. However, numerous challenges need to be overcome, in particular the lack of good p-doped Ga₂O₃ and its low thermal conductivity. The potential for overcoming these intrinsic limitations of Ga₂O₃ with integrated Ga₂O₃ – diamond junctions for power devices is discussed.

Original language	English
Title of host publication	2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
Pages	390-392
Number of pages	3
ISBN (Electronic)	978-1-6654-2178-2
DOIs	https://doi.org/10.1109/EDTM53872.2022.9798115
Publication status	Published - 21 Jun 2022
Event	6th IEEE Electron Devices Technology & Manufacturing (EDTM) Conference 2022 - Online Duration: 6 Mar 2022 → 9 Mar 2022 https://ewh.ieee.org/conf/edtm/2022/

Conference

Conference	6th IEEE Electron Devices Technology & Manufacturing (EDTM) Conference 2022
Abbreviated title	EDTM 2022
Period	6/03/22 → 9/03/22
Internet address	https://ewh.ieee.org/conf/edtm/2022/

Research Groups and Themes

CDTR

Keywords

Ga2O3
diamond
power conversion

Access to Document

10.1109/EDTM53872.2022.9798115

Handle.net

Persistent link

Cite this

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title = "Ga2O3 – diamond for next generation power electronics",

abstract = "Ga2O3, with its ultra-wide bandgap and melt-grown substrates, offers the potential for low-cost >1 kV electronics. However, numerous challenges need to be overcome, in particular the lack of good p-doped Ga2O3 and its low thermal conductivity. The potential for overcoming these intrinsic limitations of Ga2O3 with integrated Ga2O3 – diamond junctions for power devices is discussed.",

keywords = "Ga2O3, diamond, power conversion",

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AU - Mishra, Abhishek

AU - Abdallah, Zeina

AU - Kim, Hyun-Seop

AU - Pomeroy, James W

AU - Uren, Michael J

AU - Kuball, Martin H H

PY - 2022/6/21

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N2 - Ga2O3, with its ultra-wide bandgap and melt-grown substrates, offers the potential for low-cost >1 kV electronics. However, numerous challenges need to be overcome, in particular the lack of good p-doped Ga2O3 and its low thermal conductivity. The potential for overcoming these intrinsic limitations of Ga2O3 with integrated Ga2O3 – diamond junctions for power devices is discussed.

AB - Ga2O3, with its ultra-wide bandgap and melt-grown substrates, offers the potential for low-cost >1 kV electronics. However, numerous challenges need to be overcome, in particular the lack of good p-doped Ga2O3 and its low thermal conductivity. The potential for overcoming these intrinsic limitations of Ga2O3 with integrated Ga2O3 – diamond junctions for power devices is discussed.

KW - Ga2O3

KW - diamond

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M3 - Conference Contribution (Conference Proceeding)

SN - 978-1-6654-2179-9

SP - 390

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BT - 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

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