Gaussian Pulse Characterization of RF Power Amplifiers

Tommaso Cappello; Zoya Popovic; Kevin A Morris; Angelo Cappello

doi:10.1109/LMWC.2021.3054049

Gaussian Pulse Characterization of RF Power Amplifiers

Tommaso Cappello^*, Zoya Popovic, Kevin A Morris, Angelo Cappello

^*Corresponding author for this work

Research output: Contribution to journal › Article (Academic Journal) › peer-review

1 Citation (Scopus)

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Abstract

This work presents a new RF power amplifier characterization technique based on a Gaussian pulse, which is shown to approximate the envelope of a multi-carrier signal with 0.5% error around the peaks. The standard deviation of the Gaussian pulses is inversely proportional to the I/Q signal bandwidth. This test signal is shown to accurately capture nonlinear memory effects that result in gain dispersion after the peak power is reached. As an example, it is shown that the gain amplitude and phase can vary up to 2:3 dB and 6◦ for a 10-W 3.75-GHz GaN power-amplifier evaluation board, depending on the I/Q signal bandwidth and peak power level.

Original language	English
Article number	9350310
Pages (from-to)	417-420
Number of pages	4
Journal	IEEE Microwave and Wireless Components Letters
Volume	31
Issue number	4
Early online date	2 Aug 2021
DOIs	https://doi.org/10.1109/LMWC.2021.3054049
Publication status	E-pub ahead of print - 2 Aug 2021

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title = "Gaussian Pulse Characterization of RF Power Amplifiers",

abstract = "This work presents a new RF power amplifier characterization technique based on a Gaussian pulse, which is shown to approximate the envelope of a multi-carrier signal with 0.5% error around the peaks. The standard deviation of the Gaussian pulses is inversely proportional to the I/Q signal bandwidth. This test signal is shown to accurately capture nonlinear memory effects that result in gain dispersion after the peak power is reached. As an example, it is shown that the gain amplitude and phase can vary up to 2:3 dB and 6◦ for a 10-W 3.75-GHz GaN power-amplifier evaluation board, depending on the I/Q signal bandwidth and peak power level.",

author = "Tommaso Cappello and Zoya Popovic and Morris, {Kevin A} and Angelo Cappello",

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T1 - Gaussian Pulse Characterization of RF Power Amplifiers

AU - Cappello, Tommaso

AU - Popovic, Zoya

AU - Morris, Kevin A

AU - Cappello, Angelo

PY - 2021/8/2

Y1 - 2021/8/2

N2 - This work presents a new RF power amplifier characterization technique based on a Gaussian pulse, which is shown to approximate the envelope of a multi-carrier signal with 0.5% error around the peaks. The standard deviation of the Gaussian pulses is inversely proportional to the I/Q signal bandwidth. This test signal is shown to accurately capture nonlinear memory effects that result in gain dispersion after the peak power is reached. As an example, it is shown that the gain amplitude and phase can vary up to 2:3 dB and 6◦ for a 10-W 3.75-GHz GaN power-amplifier evaluation board, depending on the I/Q signal bandwidth and peak power level.

AB - This work presents a new RF power amplifier characterization technique based on a Gaussian pulse, which is shown to approximate the envelope of a multi-carrier signal with 0.5% error around the peaks. The standard deviation of the Gaussian pulses is inversely proportional to the I/Q signal bandwidth. This test signal is shown to accurately capture nonlinear memory effects that result in gain dispersion after the peak power is reached. As an example, it is shown that the gain amplitude and phase can vary up to 2:3 dB and 6◦ for a 10-W 3.75-GHz GaN power-amplifier evaluation board, depending on the I/Q signal bandwidth and peak power level.

U2 - 10.1109/LMWC.2021.3054049

DO - 10.1109/LMWC.2021.3054049

M3 - Article (Academic Journal)

VL - 31

SP - 417

EP - 420

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

SN - 1531-1309

IS - 4

M1 - 9350310

ER -

Gaussian Pulse Characterization of RF Power Amplifiers

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