Growth and characterization of 13C enriched 4H-SiC for fundamental materials studies

Growth and characterization of ¹³C enriched 4H-SiC for fundamental materials studies

YS Jang, SA Sakwe, PJ Wellmann, S Juillaguet, H Peyre, J Camassel, JW Steeds

Research output: Contribution to journal › Article (Academic Journal) › peer-review

Translated title of the contribution	Growth and characterization of ¹³C enriched 4H-SiC for fundamental materials studies
Original language	English
Pages (from-to)	13 - 16
Number of pages	4
Journal	MATERIALS SCIENCE FORUM
Volume	556-557
Publication status	Published - Jun 2007

Publisher: Trans. Tech. Publications Limited

@article{7e462fe2185b40ec92fbf1791afe0ad8,

title = "Growth and characterization of 13C enriched 4H-SiC for fundamental materials studies",

author = "YS Jang and SA Sakwe and PJ Wellmann and S Juillaguet and H Peyre and J Camassel and JW Steeds",

note = "Publisher: Trans. Tech. Publications Limited",

year = "2007",

month = jun,

language = "English",

volume = "556-557",

pages = "13 -- 16",

journal = "Materials Science Forum - Silicon Carbide and Related Materials 2005",

issn = "0255-5476",

publisher = "Trans Tech Publications Inc",

}

TY - JOUR

T1 - Growth and characterization of 13C enriched 4H-SiC for fundamental materials studies

AU - Jang, YS

AU - Sakwe, SA

AU - Wellmann, PJ

AU - Juillaguet, S

AU - Peyre, H

AU - Camassel, J

AU - Steeds, JW

N1 - Publisher: Trans. Tech. Publications Limited

PY - 2007/6

Y1 - 2007/6

M3 - Article (Academic Journal)

VL - 556-557

SP - 13

EP - 16

JO - Materials Science Forum - Silicon Carbide and Related Materials 2005

JF - Materials Science Forum - Silicon Carbide and Related Materials 2005

SN - 0255-5476

ER -