Growth and characterization of uranium-zirconium alloy thin films for nuclear industry applications

A. M. Adamska; R. Springell; A D Warren; L. Picco; O. Payton; T. B. Scott

doi:10.1088/0022-3727/47/31/315301

Growth and characterization of uranium-zirconium alloy thin films for nuclear industry applications

A. M. Adamska^*, R. Springell, A D Warren, L. Picco, O. Payton, T. B. Scott

^*Corresponding author for this work

Research output: Contribution to journal › Article (Academic Journal) › peer-review

8 Citations (Scopus)

Abstract

Polycrystalline and epitaxial U-Zr thin films have been grown on glass and single-crystal sapphire substrates using ultra-high vacuum magnetron sputtering at high temperatures (T = 800 degrees C). Mixed alpha-and gamma-U phases were detected for polycrystalline U-Zr alloy thin films with the prevailing crystal structure controlled by composition. Epitaxial U-Zr thin film samples were determined to form bi-layered structures of single-crystal gamma-U and alpha-U phases or gamma-U, delta UZr2 and alpha-U phases depending on the concentration of the alloying element.

Original language	English
Article number	315301
Number of pages	10
Journal	Journal of Physics D: Applied Physics
Volume	47
Issue number	31
DOIs	https://doi.org/10.1088/0022-3727/47/31/315301
Publication status	Published - 6 Aug 2014

Research Groups and Themes

Engineering Mathematics Research Group

Keywords

U-Zr alloys
magnetron sputtering
thin films
structure
XRD
EBSD
FIB
SEM
AFM
X-RAY
ALPHA-URANIUM
THERMAL EXPANSION
SAPPHIRE
NB(110)

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Persistent link

NERC Big Data Capital Call 2013
Scott, T. B. (Principal Investigator)
1/11/13 → 1/04/14
Project: Research

Cite this

@article{9efb3bfbec7f4c8b924246dc8dbf177a,

title = "Growth and characterization of uranium-zirconium alloy thin films for nuclear industry applications",

abstract = "Polycrystalline and epitaxial U-Zr thin films have been grown on glass and single-crystal sapphire substrates using ultra-high vacuum magnetron sputtering at high temperatures (T = 800 degrees C). Mixed alpha-and gamma-U phases were detected for polycrystalline U-Zr alloy thin films with the prevailing crystal structure controlled by composition. Epitaxial U-Zr thin film samples were determined to form bi-layered structures of single-crystal gamma-U and alpha-U phases or gamma-U, delta UZr2 and alpha-U phases depending on the concentration of the alloying element.",

keywords = "U-Zr alloys, magnetron sputtering, thin films, structure, XRD, EBSD, FIB, SEM, AFM, X-RAY, ALPHA-URANIUM, THERMAL EXPANSION, SAPPHIRE, NB(110)",

author = "Adamska, {A. M.} and R. Springell and Warren, {A D} and L. Picco and O. Payton and Scott, {T. B.}",

year = "2014",

month = aug,

day = "6",

doi = "10.1088/0022-3727/47/31/315301",

language = "English",

volume = "47",

journal = "Journal of Physics D: Applied Physics",

issn = "0022-3727",

publisher = "IOP Publishing",

number = "31",

}

TY - JOUR

T1 - Growth and characterization of uranium-zirconium alloy thin films for nuclear industry applications

AU - Adamska, A. M.

AU - Springell, R.

AU - Warren, A D

AU - Picco, L.

AU - Payton, O.

AU - Scott, T. B.

PY - 2014/8/6

Y1 - 2014/8/6

N2 - Polycrystalline and epitaxial U-Zr thin films have been grown on glass and single-crystal sapphire substrates using ultra-high vacuum magnetron sputtering at high temperatures (T = 800 degrees C). Mixed alpha-and gamma-U phases were detected for polycrystalline U-Zr alloy thin films with the prevailing crystal structure controlled by composition. Epitaxial U-Zr thin film samples were determined to form bi-layered structures of single-crystal gamma-U and alpha-U phases or gamma-U, delta UZr2 and alpha-U phases depending on the concentration of the alloying element.

AB - Polycrystalline and epitaxial U-Zr thin films have been grown on glass and single-crystal sapphire substrates using ultra-high vacuum magnetron sputtering at high temperatures (T = 800 degrees C). Mixed alpha-and gamma-U phases were detected for polycrystalline U-Zr alloy thin films with the prevailing crystal structure controlled by composition. Epitaxial U-Zr thin film samples were determined to form bi-layered structures of single-crystal gamma-U and alpha-U phases or gamma-U, delta UZr2 and alpha-U phases depending on the concentration of the alloying element.

KW - U-Zr alloys

KW - magnetron sputtering

KW - thin films

KW - structure

KW - XRD

KW - EBSD

KW - FIB

KW - SEM

KW - AFM

KW - X-RAY

KW - ALPHA-URANIUM

KW - THERMAL EXPANSION

KW - SAPPHIRE

KW - NB(110)

U2 - 10.1088/0022-3727/47/31/315301

DO - 10.1088/0022-3727/47/31/315301

M3 - Article (Academic Journal)

SN - 0022-3727

VL - 47

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

IS - 31

M1 - 315301

ER -

Growth and characterization of uranium-zirconium alloy thin films for nuclear industry applications

Abstract

Research Groups and Themes

Keywords

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Projects

NERC Big Data Capital Call 2013

Cite this