Skip to content

Growth and electronic structure of 2D hexagonal nanosheets on a corrugated rectangular substrate

Research output: Contribution to journalArticle

Standard

Growth and electronic structure of 2D hexagonal nanosheets on a corrugated rectangular substrate. / Achilli, Simona; Cavaliere, Emanuele; Nguyen, Than Hai; Cattelan, Mattia; Agnoli, Stefano.

In: Nanotechnology, Vol. 29, No. 48, 485201, 30.11.2018.

Research output: Contribution to journalArticle

Harvard

Achilli, S, Cavaliere, E, Nguyen, TH, Cattelan, M & Agnoli, S 2018, 'Growth and electronic structure of 2D hexagonal nanosheets on a corrugated rectangular substrate', Nanotechnology, vol. 29, no. 48, 485201. https://doi.org/10.1088/1361-6528/aadfd2

APA

Achilli, S., Cavaliere, E., Nguyen, T. H., Cattelan, M., & Agnoli, S. (2018). Growth and electronic structure of 2D hexagonal nanosheets on a corrugated rectangular substrate. Nanotechnology, 29(48), [485201]. https://doi.org/10.1088/1361-6528/aadfd2

Vancouver

Author

Achilli, Simona ; Cavaliere, Emanuele ; Nguyen, Than Hai ; Cattelan, Mattia ; Agnoli, Stefano. / Growth and electronic structure of 2D hexagonal nanosheets on a corrugated rectangular substrate. In: Nanotechnology. 2018 ; Vol. 29, No. 48.

Bibtex

@article{a66d3ff8e6b04121ba1c563f51c7071e,
title = "Growth and electronic structure of 2D hexagonal nanosheets on a corrugated rectangular substrate",
abstract = "Graphene and h-BN are grown by chemical vapor deposition in ultra high vacuum conditions on the Pt(110) surface. Scanning tunneling microscopy measurements and low-energy electron diffraction data indicate that graphene forms a variety of differently oriented incommensurate domains although with a strong preference to align its direction with the direction of Pt. Meanwhile, h-BN exhibits a c(8 × 10) commensurate superstructure, which presents a high level of defectivity that implies local variation of the periodicity (i.e. mixed c(8 × 10) and c(8 × 12) patches) and the introduction of local defects. The combination of advanced photoemission spectroscopy data (angle-resolved photoemission spectroscopy from the valence band) and ab initio calculations indicates that both 2D materials interact weakly with the substrate: graphene exhibits neutral doping and is morphologically flat, even if it nucleates on the relatively highly corrugated rectangular (110) surface. In the case of h-BN, the interaction is slightly stronger and is characterized by a small electron transfer from surface Pt atoms to nitrogen atoms. The (110) termination of Pt is therefore a quite interesting surface for the growth of 2D materials because given its low symmetry, it may favor the growth of selectively oriented domains but does not affect their pristine electronic properties.",
keywords = "h-BN, LEE, STM, PES, DFT, Pt(110), graphene",
author = "Simona Achilli and Emanuele Cavaliere and Nguyen, {Than Hai} and Mattia Cattelan and Stefano Agnoli",
year = "2018",
month = "11",
day = "30",
doi = "10.1088/1361-6528/aadfd2",
language = "English",
volume = "29",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing",
number = "48",

}

RIS - suitable for import to EndNote

TY - JOUR

T1 - Growth and electronic structure of 2D hexagonal nanosheets on a corrugated rectangular substrate

AU - Achilli, Simona

AU - Cavaliere, Emanuele

AU - Nguyen, Than Hai

AU - Cattelan, Mattia

AU - Agnoli, Stefano

PY - 2018/11/30

Y1 - 2018/11/30

N2 - Graphene and h-BN are grown by chemical vapor deposition in ultra high vacuum conditions on the Pt(110) surface. Scanning tunneling microscopy measurements and low-energy electron diffraction data indicate that graphene forms a variety of differently oriented incommensurate domains although with a strong preference to align its direction with the direction of Pt. Meanwhile, h-BN exhibits a c(8 × 10) commensurate superstructure, which presents a high level of defectivity that implies local variation of the periodicity (i.e. mixed c(8 × 10) and c(8 × 12) patches) and the introduction of local defects. The combination of advanced photoemission spectroscopy data (angle-resolved photoemission spectroscopy from the valence band) and ab initio calculations indicates that both 2D materials interact weakly with the substrate: graphene exhibits neutral doping and is morphologically flat, even if it nucleates on the relatively highly corrugated rectangular (110) surface. In the case of h-BN, the interaction is slightly stronger and is characterized by a small electron transfer from surface Pt atoms to nitrogen atoms. The (110) termination of Pt is therefore a quite interesting surface for the growth of 2D materials because given its low symmetry, it may favor the growth of selectively oriented domains but does not affect their pristine electronic properties.

AB - Graphene and h-BN are grown by chemical vapor deposition in ultra high vacuum conditions on the Pt(110) surface. Scanning tunneling microscopy measurements and low-energy electron diffraction data indicate that graphene forms a variety of differently oriented incommensurate domains although with a strong preference to align its direction with the direction of Pt. Meanwhile, h-BN exhibits a c(8 × 10) commensurate superstructure, which presents a high level of defectivity that implies local variation of the periodicity (i.e. mixed c(8 × 10) and c(8 × 12) patches) and the introduction of local defects. The combination of advanced photoemission spectroscopy data (angle-resolved photoemission spectroscopy from the valence band) and ab initio calculations indicates that both 2D materials interact weakly with the substrate: graphene exhibits neutral doping and is morphologically flat, even if it nucleates on the relatively highly corrugated rectangular (110) surface. In the case of h-BN, the interaction is slightly stronger and is characterized by a small electron transfer from surface Pt atoms to nitrogen atoms. The (110) termination of Pt is therefore a quite interesting surface for the growth of 2D materials because given its low symmetry, it may favor the growth of selectively oriented domains but does not affect their pristine electronic properties.

KW - h-BN

KW - LEE

KW - STM

KW - PES

KW - DFT

KW - Pt(110)

KW - graphene

U2 - 10.1088/1361-6528/aadfd2

DO - 10.1088/1361-6528/aadfd2

M3 - Article

C2 - 30192742

VL - 29

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 48

M1 - 485201

ER -