Growth of Bi2Te3 topological insulator ultra-thin layers via molecular beam epitaxy on GaAs (100)

Leonarde n. Rodrigues; C. i. l. De araujo; S. l. a. Mello; J. Laverock; Jakson m. Fonseca; W. Schwarzacher; Wesley f. Inoch; Sukarno o. Ferreira

doi:10.1063/5.0155332

Growth of Bi2Te3 topological insulator ultra-thin layers via molecular beam epitaxy on GaAs (100)

Leonarde n. Rodrigues, C. i. l. De araujo, S. l. a. Mello, J. Laverock, Jakson m. Fonseca, W. Schwarzacher, Wesley f. Inoch, Sukarno o. Ferreira

Research output: Contribution to journal › Article (Academic Journal) › peer-review

3 Citations (Scopus)

Original language	English
Article number	085301
Journal	Journal of Applied Physics
Volume	134
Issue number	8
DOIs	https://doi.org/10.1063/5.0155332
Publication status	Published - 28 Aug 2023

Bibliographical note

Funding Information:
We acknowledge the financial support by the Brazilian funding agencies CAPES, CNPq, and FAPEMIG. The authors acknowledge Newton seed funding NAFR2192040 and use of the Bristol Ultraquiet NanoESCA Laboratory at the University of Bristol. The authors also acknowledge the Laboratório de Micro e Nanofabricações (LabMiNas) for the SEM-FEG images realization and Laboratories associated with the Sistema de Laboratórios em Nanotecnologias—SisNANO/UFV (Micro e Nanoscopia and Espectroscopia) at Universidade Federal de Viçosa and the help of Hamilton A. Teixeira during SEM-FEG measurements.

Funding Information:
We acknowledge the financial support by the Brazilian funding agencies CAPES, CNPq, and FAPEMIG. The authors acknowledge Newton seed funding NAFR2192040 and use of the Bristol Ultraquiet NanoESCA Laboratory at the University of Bristol. The authors also acknowledge the Laboratório de Micro e Nanofabricações (LabMiNas) for the SEM-FEG images realization and Laboratories associated with the Sistema de Laboratórios em Nanotecnologias—SisNANO/UFV (Micro e Nanoscopia and Espectroscopia) at Universidade Federal de Viçosa and the help of Hamilton A. Teixeira during SEM-FEG measurements.

Publisher Copyright:
© 2023 Author(s).

Research Groups and Themes

Physical & Theoretical

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10.1063/5.0155332

https://pubs.aip.org/jap/article/134/8/085301/2907623/Growth-of-Bi2Te3-topological-insulator-ultra-thin

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Cite this

@article{0a7e3c3a2ce149689b7a540cde156ed1,

title = "Growth of Bi2Te3 topological insulator ultra-thin layers via molecular beam epitaxy on GaAs (100)",

author = "Rodrigues, \{Leonarde n.\} and \{De araujo\}, \{C. i. l.\} and Mello, \{S. l. a.\} and J. Laverock and Fonseca, \{Jakson m.\} and W. Schwarzacher and Inoch, \{Wesley f.\} and Ferreira, \{Sukarno o.\}",

note = "Funding Information: We acknowledge the financial support by the Brazilian funding agencies CAPES, CNPq, and FAPEMIG. The authors acknowledge Newton seed funding NAFR2192040 and use of the Bristol Ultraquiet NanoESCA Laboratory at the University of Bristol. The authors also acknowledge the Laborat{\'o}rio de Micro e Nanofabrica{\c c}{\~o}es (LabMiNas) for the SEM-FEG images realization and Laboratories associated with the Sistema de Laborat{\'o}rios em Nanotecnologias—SisNANO/UFV (Micro e Nanoscopia and Espectroscopia) at Universidade Federal de Vi{\c c}osa and the help of Hamilton A. Teixeira during SEM-FEG measurements. Funding Information: We acknowledge the financial support by the Brazilian funding agencies CAPES, CNPq, and FAPEMIG. The authors acknowledge Newton seed funding NAFR2192040 and use of the Bristol Ultraquiet NanoESCA Laboratory at the University of Bristol. The authors also acknowledge the Laborat{\'o}rio de Micro e Nanofabrica{\c c}{\~o}es (LabMiNas) for the SEM-FEG images realization and Laboratories associated with the Sistema de Laborat{\'o}rios em Nanotecnologias—SisNANO/UFV (Micro e Nanoscopia and Espectroscopia) at Universidade Federal de Vi{\c c}osa and the help of Hamilton A. Teixeira during SEM-FEG measurements. Publisher Copyright: {\textcopyright} 2023 Author(s).",

year = "2023",

month = aug,

day = "28",

doi = "10.1063/5.0155332",

language = "English",

volume = "134",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics (AIP)",

number = "8",

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TY - JOUR

T1 - Growth of Bi2Te3 topological insulator ultra-thin layers via molecular beam epitaxy on GaAs (100)

AU - Rodrigues, Leonarde n.

AU - De araujo, C. i. l.

AU - Mello, S. l. a.

AU - Laverock, J.

AU - Fonseca, Jakson m.

AU - Schwarzacher, W.

AU - Inoch, Wesley f.

AU - Ferreira, Sukarno o.

N1 - Funding Information: We acknowledge the financial support by the Brazilian funding agencies CAPES, CNPq, and FAPEMIG. The authors acknowledge Newton seed funding NAFR2192040 and use of the Bristol Ultraquiet NanoESCA Laboratory at the University of Bristol. The authors also acknowledge the Laboratório de Micro e Nanofabricações (LabMiNas) for the SEM-FEG images realization and Laboratories associated with the Sistema de Laboratórios em Nanotecnologias—SisNANO/UFV (Micro e Nanoscopia and Espectroscopia) at Universidade Federal de Viçosa and the help of Hamilton A. Teixeira during SEM-FEG measurements. Funding Information: We acknowledge the financial support by the Brazilian funding agencies CAPES, CNPq, and FAPEMIG. The authors acknowledge Newton seed funding NAFR2192040 and use of the Bristol Ultraquiet NanoESCA Laboratory at the University of Bristol. The authors also acknowledge the Laboratório de Micro e Nanofabricações (LabMiNas) for the SEM-FEG images realization and Laboratories associated with the Sistema de Laboratórios em Nanotecnologias—SisNANO/UFV (Micro e Nanoscopia and Espectroscopia) at Universidade Federal de Viçosa and the help of Hamilton A. Teixeira during SEM-FEG measurements. Publisher Copyright: © 2023 Author(s).

PY - 2023/8/28

Y1 - 2023/8/28

U2 - 10.1063/5.0155332

DO - 10.1063/5.0155332

M3 - Article (Academic Journal)

SN - 0021-8979

VL - 134

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

M1 - 085301

ER -