Growth of rhombohedral B12P2 thin films on 6H-SiC(0001) by chemical vapor deposition

P Lu, JH Edgar, JW Pomeroy, M Kuball, HM Meyer, T Aselage

Research output: Contribution to journalArticle (Academic Journal)

Abstract

The parameters necessary to deposit oriented rhombohedral boron pbosphide (B12P2) thin films on on-axis Si-face 6H-SiC(0001) substrates by chemical vapor deposition are reported. Ultra high purity BBr3 and PBr3 were used as reactants, with hydrogen as the carrier gas. The BBr3 to PBr3 flow rate ratio was adjusted to obtain good surface morphology of the B12P2 films. BBr3 to PBr3 ratios in the range of 1 to 1.5 produced smooth surfaces and moderate growth rates of 10mum/hr. Higher growth rates were obtained by increasing the BBr3 flow rate, but the surfaces became very rough. The c-axis of the B12P2 film was aligned with the c-axis of the substrate at temperatures between 1650degreesC-1700degreesC. The surface morphologies were investigated by SEM and the crystalline properties of the films were characterized by XRD and Raman spectroscopy.
Translated title of the contributionGrowth of rhombohedral B12P2 thin films on 6H-SiC(0001) by chemical vapor deposition
Original languageEnglish
Pages (from-to)121 - 125
Number of pages5
JournalMaterial Research Society Symposium Proceedings
Volume799
Issue numberSymposium Z
Publication statusPublished - 2004

Bibliographical note

Editors: Friedman, DJ; Manasreh, O; Buyanova, IA; Munkholm, A; Auret, FD
ISBN: 1558997377
Publisher: Materials Research Society
Name and Venue of Conference: Symposium on Progress in Compound Semiconductor Materials III - Electronic and Optoelectronic Applications, held at MRS Meeting February 2003
Conference Organiser: Materials Research Society

Structured keywords

  • CDTR

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