Growth of ZnSe/MgS strained-layer superlattices by molecular beam epitaxy

N Teraguchi, H Mouri, Y Tomomura, A SUzuki, JM Rorison, G Duggan

Research output: Contribution to journalArticle (Academic Journal)peer-review

33 Citations (Scopus)

Abstract

Growth of ZnSe/MgS strained-layer superlattices (SLSs) has been carried out by molecular beam epitaxy. The crystal quality of SLSs degraded with MgS thickness of more than about 3 monolayers. Photoluminescence due to the transition between quantized levels was observed. Photoluminescence peak energies higher than 3.0 eV at 77 K were observed, which are comparable to that of ZnMgSSe quaternary material
Translated title of the contributionGrowth of ZnSe/MgS strained-layer superlattices by molecular beam epitaxy
Original languageEnglish
Pages (from-to)2945 - 2947
Number of pages3
JournalApplied Physics Letters
Volume67 (20)
DOIs
Publication statusPublished - Nov 1995

Bibliographical note

Publisher: American Institute of Physics

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