High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation

Riad Kabouche; Romain  Pecheux; Kathia  Harrouche; Etienne  Okada; Farid  Medjdoub; Joff Derluyn; Stefan  Degroote; Marianne  Germain; Filip Gucmann; Callum J Middleton; James W Pomeroy; Martin H H Kuball

doi:10.1142/S0129156419400032

High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation

Riad Kabouche, Romain Pecheux, Kathia Harrouche, Etienne Okada, Farid Medjdoub, Joff Derluyn, Stefan Degroote, Marianne Germain, Filip Gucmann, Callum J Middleton, James W Pomeroy, Martin H H Kuball

School of Physics

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Abstract

In this paper, we demonstrate Q-band power performance of carbon doped AlN/GaN high electron mobility transistors (HEMTs) using a deep sub-micrometer gate length (120 nm). With a maximum drain current density ID of 1.5 A/mm associated to a high electron confinement and an extrinsic transconductance gm of 500 mS/mm, this structure shows excellent electrical characteristics. A maximum oscillation frequency fmax of 242 GHz has been observed. As a result, a state-of-the-art combination at 40 GHz of output power density (POUT = 7 W/mm) and power added efficiency (PAE) of 52% up to VDS = 25V has been obtained. The achievement of such outstanding performance is attributed to the reduced thermal resistance (RTH) as compared to the commonly used double heterostructure by means of Raman thermography.

Original language	English
Article number	1940003 (2019)
Journal	International Journal of High Speed Electronics and Systems
Volume	28
Issue number	01/02
Early online date	11 Aug 2019
DOIs	https://doi.org/10.1142/S0129156419400032
Publication status	E-pub ahead of print - 11 Aug 2019

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10.1142/S0129156419400032

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High Performance Buffers for RF GaN Electronics
Kuball, M. H. H.
17/11/16 → 16/05/20
Project: Research

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Kabouche, R., Pecheux, R., Harrouche, K., Okada, E., Medjdoub, F., Derluyn, J., Degroote, S., Germain, M., Gucmann, F., Middleton, C. J., Pomeroy, J. W., & Kuball, M. H. H. (2019). High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation. International Journal of High Speed Electronics and Systems, 28(01/02), [1940003 (2019) ]. https://doi.org/10.1142/S0129156419400032

Kabouche, Riad ; Pecheux, Romain ; Harrouche, Kathia ; Okada, Etienne ; Medjdoub, Farid ; Derluyn, Joff ; Degroote, Stefan ; Germain, Marianne ; Gucmann, Filip ; Middleton, Callum J ; Pomeroy, James W ; Kuball, Martin H H. / High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation. In: International Journal of High Speed Electronics and Systems. 2019 ; Vol. 28, No. 01/02.

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title = "High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation",

abstract = "In this paper, we demonstrate Q-band power performance of carbon doped AlN/GaN high electron mobility transistors (HEMTs) using a deep sub-micrometer gate length (120 nm). With a maximum drain current density ID of 1.5 A/mm associated to a high electron confinement and an extrinsic transconductance gm of 500 mS/mm, this structure shows excellent electrical characteristics. A maximum oscillation frequency fmax of 242 GHz has been observed. As a result, a state-of-the-art combination at 40 GHz of output power density (POUT = 7 W/mm) and power added efficiency (PAE) of 52% up to VDS = 25V has been obtained. The achievement of such outstanding performance is attributed to the reduced thermal resistance (RTH) as compared to the commonly used double heterostructure by means of Raman thermography.",

author = "Riad Kabouche and Romain Pecheux and Kathia Harrouche and Etienne Okada and Farid Medjdoub and Joff Derluyn and Stefan Degroote and Marianne Germain and Filip Gucmann and Middleton, {Callum J} and Pomeroy, {James W} and Kuball, {Martin H H}",

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day = "11",

doi = "10.1142/S0129156419400032",

language = "English",

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Kabouche, R, Pecheux, R, Harrouche, K, Okada, E, Medjdoub, F, Derluyn, J, Degroote, S, Germain, M, Gucmann, F, Middleton, CJ, Pomeroy, JW & Kuball, MHH 2019, 'High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation', International Journal of High Speed Electronics and Systems, vol. 28, no. 01/02, 1940003 (2019) . https://doi.org/10.1142/S0129156419400032

High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation. / Kabouche, Riad; Pecheux, Romain ; Harrouche, Kathia ; Okada, Etienne; Medjdoub, Farid ; Derluyn, Joff; Degroote, Stefan; Germain, Marianne ; Gucmann, Filip; Middleton, Callum J; Pomeroy, James W ; Kuball, Martin H H.

In: International Journal of High Speed Electronics and Systems, Vol. 28, No. 01/02, 1940003 (2019) , 11.08.2019.

Research output: Contribution to journal › Article (Academic Journal) › peer-review

TY - JOUR

T1 - High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation

AU - Kabouche, Riad

AU - Pecheux, Romain

AU - Harrouche, Kathia

AU - Okada, Etienne

AU - Medjdoub, Farid

AU - Derluyn, Joff

AU - Degroote, Stefan

AU - Germain, Marianne

AU - Gucmann, Filip

AU - Middleton, Callum J

AU - Pomeroy, James W

AU - Kuball, Martin H H

PY - 2019/8/11

Y1 - 2019/8/11

N2 - In this paper, we demonstrate Q-band power performance of carbon doped AlN/GaN high electron mobility transistors (HEMTs) using a deep sub-micrometer gate length (120 nm). With a maximum drain current density ID of 1.5 A/mm associated to a high electron confinement and an extrinsic transconductance gm of 500 mS/mm, this structure shows excellent electrical characteristics. A maximum oscillation frequency fmax of 242 GHz has been observed. As a result, a state-of-the-art combination at 40 GHz of output power density (POUT = 7 W/mm) and power added efficiency (PAE) of 52% up to VDS = 25V has been obtained. The achievement of such outstanding performance is attributed to the reduced thermal resistance (RTH) as compared to the commonly used double heterostructure by means of Raman thermography.

AB - In this paper, we demonstrate Q-band power performance of carbon doped AlN/GaN high electron mobility transistors (HEMTs) using a deep sub-micrometer gate length (120 nm). With a maximum drain current density ID of 1.5 A/mm associated to a high electron confinement and an extrinsic transconductance gm of 500 mS/mm, this structure shows excellent electrical characteristics. A maximum oscillation frequency fmax of 242 GHz has been observed. As a result, a state-of-the-art combination at 40 GHz of output power density (POUT = 7 W/mm) and power added efficiency (PAE) of 52% up to VDS = 25V has been obtained. The achievement of such outstanding performance is attributed to the reduced thermal resistance (RTH) as compared to the commonly used double heterostructure by means of Raman thermography.

U2 - 10.1142/S0129156419400032

DO - 10.1142/S0129156419400032

M3 - Article (Academic Journal)

VL - 28

JO - International Journal of High Speed Electronics and Systems

JF - International Journal of High Speed Electronics and Systems

IS - 01/02

M1 - 1940003 (2019)

ER -

High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation

Abstract

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High Performance Buffers for RF GaN Electronics

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