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High frequency guided mode resonances in mass-loaded, thin film gallium nitride surface acoustic wave devices

Research output: Contribution to journalLetter

Original languageEnglish
Article number212104 (2019)
Number of pages6
JournalApplied Physics Letters
Volume115
DOIs
DateAccepted/In press - 1 Nov 2019
DatePublished (current) - 21 Nov 2019

Abstract

We demonstrate high-frequency (>3 GHz), high quality factor radio frequency (RF) resonators in unreleased thin film gallium nitride (GaN) on sapphire and silicon carbide substrates by exploiting acoustic guided mode (Lamb wave) resonances. The associated energy trapping, due to mass loading from gold electrodes, allows us to efficiently excite these resonances from a 50 X input. The higher phase velocity, combined with lower electrode damping, enables high quality factors with moderate electrode pitch and provides a viable route towards high-frequency piezoelectric devices. The GaN platform, with its ability to guide and localize high-frequency sound on the surface of a chip with access to high-performance active devices, will serve as a key building block for monolithically integrated RF front-ends.

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  • Full-text PDF (accepted author manuscript)

    Rights statement: This is the author accepted manuscript (AAM). The final published version (version of record) is available online via AIP Publishing at https://aip.scitation.org/doi/full/10.1063/1.5123718. Please refer to any applicable terms of use of the publisher.

    Accepted author manuscript, 751 KB, PDF document

  • Full-text PDF (final published version)

    Rights statement: This is the final published version of the article (version of record). It first appeared online via AIP Publishing at https://aip.scitation.org/doi/full/10.1063/1.5123718. Please refer to any applicable terms of use of the publisher.

    Final published version, 2.41 MB, PDF document

    Embargo ends: 21/11/20

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