This paper describes for the first time, a high-speed and low-power III-V p-channel QWFET using a compressively strained InSb QW structure. The InSb p-channel QW device structure, grown using solid source MBE, demonstrates a high hole mobility of 1,230cm(2)/V-s. The shortest 40nm gate length (L(G)) transistors achieve peak transconductance (G(m)) of 510 mu S/mu m and cut-off frequency (f(T)) of 140GHz at supply voltage of 0.5V. These represent the highest G(m) and f(T) ever reported for III-V p-channel FETs. In addition, effective hole velocity of this device has been measured and compared to that of the standard strained Si p-channel MOSFET.
|Translated title of the contribution||High-Performance 40nm Gate Length InSb P-Channel Compressively Strained Quantum Well Field Effect Transistors for Low-Power (V(CC)=0.5V) Logic Applications|
|Title of host publication||IEEE International Electron Devices Meeting|
|Pages||727 - 730|
|Number of pages||4|
|Publication status||Published - 2008|