High-Performance 40nm Gate Length InSb P-Channel Compressively Strained Quantum Well Field Effect Transistors for Low-Power (V(CC)=0.5V) Logic Applications

M. Radosavljevic; T. Ashley; A. Andreev; S. D. Coomber; G. Dewey; M. T. Emeny; M. Fearn; D. G. Hayes; K. P. Hilton; M. K. Hudait; R. Jefferies; T. Martin; R. Pillarisetty; W. Rachmady; T. Rakshit; S. J. Smith; MJ Uren; D. J. Wallis; P. J. Wilding; R. Chau

doi:10.1109/IEDM.2008.4796798

High-Performance 40nm Gate Length InSb P-Channel Compressively Strained Quantum Well Field Effect Transistors for Low-Power (V(CC)=0.5V) Logic Applications

M. Radosavljevic, T. Ashley, A. Andreev, S. D. Coomber, G. Dewey, M. T. Emeny, M. Fearn, D. G. Hayes, K. P. Hilton, M. K. Hudait, R. Jefferies, T. Martin, R. Pillarisetty, W. Rachmady, T. Rakshit, S. J. Smith, MJ Uren, D. J. Wallis, P. J. Wilding, R. Chau

School of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

65 Citations (Scopus)

Abstract

This paper describes for the first time, a high-speed and low-power III-V p-channel QWFET using a compressively strained InSb QW structure. The InSb p-channel QW device structure, grown using solid source MBE, demonstrates a high hole mobility of 1,230cm(2)/V-s. The shortest 40nm gate length (L(G)) transistors achieve peak transconductance (G(m)) of 510 mu S/mu m and cut-off frequency (f(T)) of 140GHz at supply voltage of 0.5V. These represent the highest G(m) and f(T) ever reported for III-V p-channel FETs. In addition, effective hole velocity of this device has been measured and compared to that of the standard strained Si p-channel MOSFET.

Translated title of the contribution	High-Performance 40nm Gate Length InSb P-Channel Compressively Strained Quantum Well Field Effect Transistors for Low-Power (V(CC)=0.5V) Logic Applications
Original language	English
Title of host publication	IEEE International Electron Devices Meeting
Pages	727 - 730
Number of pages	4
DOIs	https://doi.org/10.1109/IEDM.2008.4796798
Publication status	Published - 2008

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Radosavljevic, M., Ashley, T., Andreev, A., Coomber, S. D., Dewey, G., Emeny, M. T., Fearn, M., Hayes, D. G., Hilton, K. P., Hudait, M. K., Jefferies, R., Martin, T., Pillarisetty, R., Rachmady, W., Rakshit, T., Smith, S. J., Uren, MJ., Wallis, D. J., Wilding, P. J., & Chau, R. (2008). High-Performance 40nm Gate Length InSb P-Channel Compressively Strained Quantum Well Field Effect Transistors for Low-Power (V(CC)=0.5V) Logic Applications. In IEEE International Electron Devices Meeting (pp. 727 - 730) https://doi.org/10.1109/IEDM.2008.4796798

@inproceedings{bf1ee4d3d3e047d5b83b6ff7a4d48a5b,

title = "High-Performance 40nm Gate Length InSb P-Channel Compressively Strained Quantum Well Field Effect Transistors for Low-Power (V(CC)=0.5V) Logic Applications",

abstract = "This paper describes for the first time, a high-speed and low-power III-V p-channel QWFET using a compressively strained InSb QW structure. The InSb p-channel QW device structure, grown using solid source MBE, demonstrates a high hole mobility of 1,230cm(2)/V-s. The shortest 40nm gate length (L(G)) transistors achieve peak transconductance (G(m)) of 510 mu S/mu m and cut-off frequency (f(T)) of 140GHz at supply voltage of 0.5V. These represent the highest G(m) and f(T) ever reported for III-V p-channel FETs. In addition, effective hole velocity of this device has been measured and compared to that of the standard strained Si p-channel MOSFET.",

author = "M. Radosavljevic and T. Ashley and A. Andreev and Coomber, {S. D.} and G. Dewey and Emeny, {M. T.} and M. Fearn and Hayes, {D. G.} and Hilton, {K. P.} and Hudait, {M. K.} and R. Jefferies and T. Martin and R. Pillarisetty and W. Rachmady and T. Rakshit and Smith, {S. J.} and MJ Uren and Wallis, {D. J.} and Wilding, {P. J.} and R. Chau",

year = "2008",

doi = "10.1109/IEDM.2008.4796798",

language = "English",

isbn = "9781424423774",

pages = "727 -- 730",

booktitle = "IEEE International Electron Devices Meeting",

}

Radosavljevic, M, Ashley, T, Andreev, A, Coomber, SD, Dewey, G, Emeny, MT, Fearn, M, Hayes, DG, Hilton, KP, Hudait, MK, Jefferies, R, Martin, T, Pillarisetty, R, Rachmady, W, Rakshit, T, Smith, SJ, Uren, MJ, Wallis, DJ, Wilding, PJ & Chau, R 2008, High-Performance 40nm Gate Length InSb P-Channel Compressively Strained Quantum Well Field Effect Transistors for Low-Power (V(CC)=0.5V) Logic Applications. in IEEE International Electron Devices Meeting. pp. 727 - 730. https://doi.org/10.1109/IEDM.2008.4796798

High-Performance 40nm Gate Length InSb P-Channel Compressively Strained Quantum Well Field Effect Transistors for Low-Power (V(CC)=0.5V) Logic Applications. / Radosavljevic, M.; Ashley, T.; Andreev, A. et al.
IEEE International Electron Devices Meeting. 2008. p. 727 - 730.

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - High-Performance 40nm Gate Length InSb P-Channel Compressively Strained Quantum Well Field Effect Transistors for Low-Power (V(CC)=0.5V) Logic Applications

AU - Radosavljevic, M.

AU - Ashley, T.

AU - Andreev, A.

AU - Coomber, S. D.

AU - Dewey, G.

AU - Emeny, M. T.

AU - Fearn, M.

AU - Hayes, D. G.

AU - Hilton, K. P.

AU - Hudait, M. K.

AU - Jefferies, R.

AU - Martin, T.

AU - Pillarisetty, R.

AU - Rachmady, W.

AU - Rakshit, T.

AU - Smith, S. J.

AU - Uren, MJ

AU - Wallis, D. J.

AU - Wilding, P. J.

AU - Chau, R.

PY - 2008

Y1 - 2008

N2 - This paper describes for the first time, a high-speed and low-power III-V p-channel QWFET using a compressively strained InSb QW structure. The InSb p-channel QW device structure, grown using solid source MBE, demonstrates a high hole mobility of 1,230cm(2)/V-s. The shortest 40nm gate length (L(G)) transistors achieve peak transconductance (G(m)) of 510 mu S/mu m and cut-off frequency (f(T)) of 140GHz at supply voltage of 0.5V. These represent the highest G(m) and f(T) ever reported for III-V p-channel FETs. In addition, effective hole velocity of this device has been measured and compared to that of the standard strained Si p-channel MOSFET.

AB - This paper describes for the first time, a high-speed and low-power III-V p-channel QWFET using a compressively strained InSb QW structure. The InSb p-channel QW device structure, grown using solid source MBE, demonstrates a high hole mobility of 1,230cm(2)/V-s. The shortest 40nm gate length (L(G)) transistors achieve peak transconductance (G(m)) of 510 mu S/mu m and cut-off frequency (f(T)) of 140GHz at supply voltage of 0.5V. These represent the highest G(m) and f(T) ever reported for III-V p-channel FETs. In addition, effective hole velocity of this device has been measured and compared to that of the standard strained Si p-channel MOSFET.

U2 - 10.1109/IEDM.2008.4796798

DO - 10.1109/IEDM.2008.4796798

M3 - Conference Contribution (Conference Proceeding)

SN - 9781424423774

SP - 727

EP - 730

BT - IEEE International Electron Devices Meeting

ER -

High-Performance 40nm Gate Length InSb P-Channel Compressively Strained Quantum Well Field Effect Transistors for Low-Power (V(CC)=0.5V) Logic Applications

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