High-Performance 40nm Gate Length InSb P-Channel Compressively Strained Quantum Well Field Effect Transistors for Low-Power (V(CC)=0.5V) Logic Applications

M. Radosavljevic, T. Ashley, A. Andreev, S. D. Coomber, G. Dewey, M. T. Emeny, M. Fearn, D. G. Hayes, K. P. Hilton, M. K. Hudait, R. Jefferies, T. Martin, R. Pillarisetty, W. Rachmady, T. Rakshit, S. J. Smith, MJ Uren, D. J. Wallis, P. J. Wilding, R. Chau

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

65 Citations (Scopus)

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