High-pressure high-temperature annealing of ion-implanted GaN films monitored by visible and ultraviolet Raman scattering

MHH Kuball, JM Hayes, J Jun, T Suski, M Leszczynski, J Domagala, HH Tan, JS Williams, C Jagadish

Research output: Contribution to journal › Article (Academic Journal) › peer-review

Translated title of the contribution	High-pressure high-temperature annealing of ion-implanted GaN films monitored by visible and ultraviolet Raman scattering
Original language	English
Pages (from-to)	2736 - 2741
Journal	Journal of Applied Physics
Volume	87
Publication status	Published - 2000

Publisher: American Institute of Physics

Research Groups and Themes

@article{b32d6e0eb15148c981b2f803ec5936d3,

title = "High-pressure high-temperature annealing of ion-implanted GaN films monitored by visible and ultraviolet Raman scattering",

author = "MHH Kuball and JM Hayes and J Jun and T Suski and M Leszczynski and J Domagala and HH Tan and JS Williams and C Jagadish",

note = "Publisher: American Institute of Physics",

year = "2000",

language = "English",

volume = "87",

pages = "2736 -- 2741",

journal = "Journal of Applied Physics",

issn = "1089-7550",

publisher = "American Institute of Physics (AIP)",

}

TY - JOUR

T1 - High-pressure high-temperature annealing of ion-implanted GaN films monitored by visible and ultraviolet Raman scattering

AU - Kuball, MHH

AU - Hayes, JM

AU - Jun, J

AU - Suski, T

AU - Leszczynski, M

AU - Domagala, J

AU - Tan, HH

AU - Williams, JS

AU - Jagadish, C

N1 - Publisher: American Institute of Physics

PY - 2000

Y1 - 2000

M3 - Article (Academic Journal)

SN - 1089-7550

VL - 87

SP - 2736

EP - 2741

JO - Journal of Applied Physics

JF - Journal of Applied Physics

ER -